Electrically Controllable van der Waals Antiferromagnetic Spin Valve

Abstract

We propose a spin valve that is based on van der Waals antiferromagnetism and fully electrically controlled. The device is composed of two antiferromagnetic terminals that allow for vertical bias control and a linked central scattering potential region. The magnetoresistance varies significantly when the bias orientations in two terminals are switched from parallel to antiparallel because this switch induces a mismatch of the bands for the same spin projection in different parts of the system. It is shown from density functional calculations that bilayer graphene encapsulated by two atomic layers of Cr${}_2$Ge${}_2$Te${}_6$ provides a material platform to realize the antiferromagnetism, which is robust against the required vertical electric fields.

6 pages, 3 figures

References in corpus (8)

• The electronic properties of graphene
• 2D materials and van der Waals heterostructures
• Graphene Spintronics
• The electronic properties of bilayer graphene
• Spin-orbit driven band inversion in bilayer graphene by van der Waals proximity effect
• Pseudospin valve in bilayer graphene: towards graphene-based pseudospintronics
• Tunable spin-orbit coupling and symmetry-protected edge states in graphene/WS${}_2$
• Quantum rescaling, domain metastability and hybrid domain-walls in two-dimensional CrI3 magnets

Cited by in corpus (2)

• Proximity spin-orbit and exchange coupling in ABA and ABC trilayer graphene van der Waals heterostructures
• Layered Opposite Rashba Spin-Orbit Coupling in Bilayer Graphene: Loss of Spin Chirality, Symmetry Breaking and Topological Transition