Electrically Controllable van der Waals Antiferromagnetic Spin Valve

Abstract

We propose a spin valve that is based on van der Waals antiferromagnetism and fully electrically controlled. The device is composed of two antiferromagnetic terminals that allow for vertical bias control and a linked central scattering potential region. The magnetoresistance varies significantly when the bias orientations in two terminals are switched from parallel to antiparallel because this switch induces a mismatch of the bands for the same spin projection in different parts of the system. It is shown from density functional calculations that bilayer graphene encapsulated by two atomic layers of Cr${}_2$Ge${}_2$Te${}_6$ provides a material platform to realize the antiferromagnetism, which is robust against the required vertical electric fields.

arXiv comment6 pages, 3 figures

References in corpus (27)

• The electronic properties of graphene
• 2D materials and van der Waals heterostructures
• Layer-dependent Ferromagnetism in a van der Waals Crystal down to the Monolayer Limit
• Discovery of intrinsic ferromagnetism in 2D van der Waals crystals
• Antiferromagnetic spintronics
• Antiferromagnetic spintronics
• Graphene Spintronics
• Giant Tunneling Magnetoresistance in Spin-Filter van der Waals Heterostructures
• The electronic properties of bilayer graphene
• Controlling magnetism in 2D CrI3 by electrostatic doping
• Electric-field switching of two-dimensional van der Waals magnets
• Giant and nonreciprocal second harmonic generation from layered antiferromagnetism in bilayer CrI3
• Spin Relaxation in Single Layer and Bilayer Graphene
• Gate-tunable Topological Valley Transport in Bilayer Graphene
• Gate-controlled topological conducting channels in bilayer graphene
• Direct imaging of topological edge states at a bilayer graphene domain wall
• Spin-orbit driven band inversion in bilayer graphene by van der Waals proximity effect
• Van der Waals spin valves
• Pseudospin valve in bilayer graphene: towards graphene-based pseudospintronics
• Tunable spin-orbit coupling and symmetry-protected edge states in graphene/WS${}_2$
• Ab-initio study of gap opening and screening effects in gated bilayer graphene
• Strong and Tunable Spin Lifetime Anisotropy in Dual-Gated Bilayer Graphene
• Electrically tunable exchange splitting in bilayer graphene on monolayer Cr${}_2$X${}_2$Te${}_6$ with X=Ge, Si, and Sn
• Quantum rescaling, domain metastability and hybrid domain-walls in two-dimensional CrI3 magnets
• Swapping Exchange and Spin-Orbit Coupling in 2D van der Waals Heterostructures
• Spin-Valley Polarized Quantum Anomalous Hall Effect and a Valley-Controlled Half Metal in Bilayer Graphene
• Antiferromagnetic spin valve from heterostructure of two-dimensional hexagonal crystals

Cited by in corpus (6)

• Proximity spin-orbit and exchange coupling in ABA and ABC trilayer graphene van der Waals heterostructures
• Towards fully two-dimensional spintronic devices
• Giant Nonvolatile Multistate Resistance with Fully Magnetically Controlled van der Waals Multiferroic Tunnel Junctions
• Magnetic order-dependent giant tunneling magnetoresistance and electroresistance in van der Waals antiferromagnetic-multiferroic tunnel junctions
• Proximity-induced diversified magnetic states and electrically-controllable spin polarization in bilayer graphene: Towards layered spintronics
• Layered Opposite Rashba Spin-Orbit Coupling in Bilayer Graphene: Loss of Spin Chirality, Symmetry Breaking and Topological Transition