Proximity-induced diversified magnetic states and electrically-controllable spin polarization in bilayer graphene: Towards layered spintronics

Abstract

Compared to monolayer graphene, electrons in Bernal-stacked bilayer graphene (BLG) have an additional layer degree of freedom, offering a platform for developing {\it layered spintronics} with the help of proximity-induced magnetism. Based on an effective phenomenological model, we systematically study the effect of this magnetism on the spin-dependent band structure near the Fermi energy and identify the magnetic phases induced in BLG by proximity with magnets. We show that spin polarization can develop in BLG due to this proximity effect. This spin polarization depends strongly on the layer distribution of magnetism, and can always be controlled by gate voltage which shifts spin-dependent band edges and modifies the total band gap. We further show that the band spin polarization can be modified by the proximity-induced staggered sublattice potential. By taking full advantage of layer-dependent magnetism in BLG, we propose that spintronic devices such as a spin filter, a giant magnetoresistence device, and a spin diode can operate under fully electric control, which is easier than the common magnetic field control.

arXiv comment9 pages

References in corpus (33)

• The electronic properties of graphene
• Magic-angle graphene superlattices: a new platform for unconventional superconductivity
• 2D materials and van der Waals heterostructures
• The electronic properties of bilayer graphene
• Proximity-induced ferromagnetism in graphene revealed by anomalous Hall effect
• Colloquium: Spintronics in graphene and other two-dimensional materials
• Generation and detection of pure valley current by electrically induced Berry curvature in bilayer graphene
• Electronic properties of graphene-based bilayer systems
• Quantum Anomalous Hall Effect in Graphene Proximity Coupled to an Antiferromagnetic Insulator
• Graphene for spintronics: giant Rashba splitting due to hybridization with Au
• Strong interfacial exchange field in the graphene/EuS heterostructure
• Magnetic Insulator-Induced Proximity Effects in Graphene: Spin Filtering and Exchange Splitting Gaps
• Tunable symmetry breaking and helical edge transport in a graphene quantum spin Hall state
• Spin-orbit driven band inversion in bilayer graphene by van der Waals proximity effect
• Strong magnetization and Chern insulators in compressed graphene/CrI${}_3$ van der Waals heterostructures
• Van der Waals spin valves
• Integration of the Ferromagnetic Insulator EuO onto Graphene
• Tailoring magnetic insulator proximity effects in graphene: First-principles calculations
• Intrinsic spin-orbit coupling gap and the evidence of a topological state in graphene
• Electrical and Thermal Generation of Spin Currents by Magnetic Graphene
• Quantum Anomalous Hall Effects in Graphene from Proximity-Induced Uniform and Staggered Spin-Orbit and Exchange Coupling
• Instabilities of the AA-stacked graphene bilayer
• Synthesis, Engineering, and Theory of 2D van der Waals Magnets
• Quantum Hall Effect Measurement of Spin-Orbit Coupling Strengths in Ultraclean Bilayer Graphene/WSe2 Heterostructures
• Antiferromagnetic state in bilayer graphene
• Electrically tunable exchange splitting in bilayer graphene on monolayer Cr${}_2$X${}_2$Te${}_6$ with X=Ge, Si, and Sn
• Swapping Exchange and Spin-Orbit Coupling in 2D van der Waals Heterostructures
• Engineering Proximity Exchange by Twisting: Reversal of Ferromagnetic and Emergence of Antiferromagnetic Dirac Bands in Graphene/Cr${}_2$Ge${}_2$Te${}_6$
• Spin-Valley Polarized Quantum Anomalous Hall Effect and a Valley-Controlled Half Metal in Bilayer Graphene
• Bilayer graphene encapsulated within monolayers of WS${}_2$ or Cr${}_2$Ge${}_2$Te${}_6$: Tunable proximity spin-orbit or exchange coupling
• Proximity-induced topological phases in bilayer graphene
• Rashba interaction and local magnetic moments in a graphene-Boron Nitride heterostructure by intercalation with Au
• Electrically Controllable van der Waals Antiferromagnetic Spin Valve