Instabilities of the AA-stacked graphene bilayer
arXiv:1111.5093 · doi:10.1103/PhysRevLett.109.206801
Abstract
Tight-binding calculations predict that the AA-stacked graphene bilayer has one electron and one hole conducting bands, and that the Fermi surfaces of these bands coincide. We demonstrate that as a result of this degeneracy, the bilayer becomes unstable with respect to a set of spontaneous symmetry violations. Which of the symmetries is broken depends on the microscopic details of the system. We find that antiferromagnetism is the more stable order parameter. This order is stabilized by the strong on-site Coulomb repulsion. For an on-site repulsion energy typical for graphene systems, the antiferromagnetic gap can exist up to room temperatures.
4 pages, 2 eps figure, submitted to Phys. Rev. Lett
References in corpus (7)
- The electronic properties of graphene
- Interaction-Driven Spectrum Reconstruction in Bilayer Graphene
- Quantum Anomalous Hall State in Bilayer Graphene
- Few layers graphene on 6H-SiC(000-1): an STM study
- Strong covalent bonding between two graphene layers
- Low density ferromagnetism in biased bilayer graphene
- Band topology and quantum spin Hall effect in bilayer graphene
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