AA-stacked bilayer graphene in an applied electric field: Tunable antiferromagnetism and coexisting exciton order parameter
arXiv:1406.7368 · doi:10.1103/PhysRevB.90.155415
Abstract
We study the electronic properties of AA-stacked bilayer graphene in a transverse electric field. The strong on-site Coulomb repulsion stabilizes the antiferromagnetic order in such a system. The antiferromagnetic order is suppressed by the transverse bias voltage, at least partially. The inter-plane Coulomb repulsion and non-zero voltage stabilize an exciton order parameter. The exciton order parameter coexists with the antiferromagnetism and can be as large as several tens of meV for realistic values of the bias voltage and interaction constants. The application of a transverse bias voltage can be used to control the transport properties of the bilayer.
arXiv comment8 pages, 6 figures
References in corpus (39)
- The electronic properties of graphene
- Landau level degeneracy and quantum Hall effect in a graphite bilayer
- Biased bilayer graphene: semiconductor with a gap tunable by electric field effect
- Unconventional quantum Hall effect and Berry's phase of 2pi in bilayer graphene
- Properties of Graphene: A Theoretical Perspective
- Bose-Einstein Condensation of Excitons in Bilayer Electron Systems
- Ab Initio Theory of Gate Induced Gaps in Graphene Bilayers
- Strength of effective Coulomb interactions in graphene and graphite
- Strong Coulomb drag and broken symmetry in double-layer graphene
- Room-Temperature Superfluidity in Graphene Bilayers
- Electronic properties of mesoscopic graphene structures: charge confinement and control of spin and charge transport
- Broken symmetry states and divergent resistance in suspended bilayer graphene
- Interaction-Driven Spectrum Reconstruction in Bilayer Graphene
- Many-body instability of Coulomb interacting bilayer graphene: RG approach
- Optimal Hubbard models for materials with nonlocal Coulomb interactions: graphene, silicene and benzene
- Quantum Anomalous Hall State in Bilayer Graphene
- Electron-electron interactions and the phase diagram of a graphene bilayer
- Exciton Condensation and Perfect Coulomb Drag
- High Temperature Superfluidity in Double Bilayer Graphene
- How to make a bilayer exciton condensate flow
- Dynamical Screening and Ferroelectric-type Excitonic Instability in Bilayer Graphene
- Spontaneous symmetry breaking and Lifshitz transition in bilayer graphene
- Electron-electron interactions in graphene bilayers
- Strong covalent bonding between two graphene layers
- Excitonic condensation of massless fermions in graphene bilayers
- Low density ferromagnetism in biased bilayer graphene
- Instabilities of the AA-stacked graphene bilayer
- Tunable Excitons in Biased Bilayer Graphene
- Cooper pairing of electrons and holes in graphene bilayer: Correlation effects
- Stacking Sequence Dependence of Graphene Layers on SiC(000-1) - Experimental and Theoretical Investigation
- Band topology and quantum spin Hall effect in bilayer graphene
- Coulomb drag in monolayer and bilayer graphene
- Optical transitions between Landau levels: AA-stacked bilayer graphene
- Excitonic condensation in a double-layer graphene system
- Metal-insulator transition and phase separation in doped AA-stacked graphene bilayers
- Antiferromagnetic states and phase separation in doped AA-stacked graphene bilayers
- Interlayer excitonic superfluidity in graphene
- Chiral superfluid states in hybrid graphene heterostructures
- Photoemission spectra of massless Dirac fermions on the verge of exciton condensation
Cited by in corpus (21)
- Electronic properties of graphene-based bilayer systems
- Electrically tunable gauge fields in tiny-angle twisted bilayer graphene
- Externally controlled band gap in twisted bilayer graphene
- Many-body effects in twisted bilayer graphene at low twist angles
- Spin-valley half-metal as a prospective material for spin-valley-tronics
- Spin density wave and electron nematicity in magic-angle twisted bilayer graphene
- Spin-valley half-metal in systems with Fermi surface nesting
- Antiferromagnetic ordering and excitonic pairing in the AA-stacked bilayer graphene
- Can bilayer graphene become a fractional metal?
- Competition of spatially inhomogeneous states in antiferromagnetic Hubbard model
- Excitonic condensation and metal-semiconductor transition in AA bilayer graphene in the external magnetic field
- Dynamical spin susceptibility of spin-valley half-metal
- Ordering in SU(4)-symmetric model of AA bilayer graphene
- Magic radius of AA bilayer graphene quantum dot
- Spin-density wave state in simple hexagonal graphite
- Coexistence of nematic superconductivity and spin density wave in magic-angle twisted bilayer graphene
- Canted antiferromagnetism and excitonic order in gated double-layer graphene
- Ordered states in AB bilayer graphene in SU(4)-symmetric model
- Electronic and Phonon Instabilities in Bilayer Graphene under Applied External Bias
- Applied electric and magnetic field effects on the bandgap formation and antiferromagnetic ordering in AA-stacked Bilayer Graphene
- Superconducting Symmetry Phases and Dominant bands in (Ca-) Intercalated AA- Bilayer Graphene