Antiferromagnetic states and phase separation in doped AA-stacked graphene bilayers
arXiv:1305.0330 · doi:10.1103/PhysRevB.88.045409
Abstract
We study electronic properties of AA-stacked graphene bilayers. In the single-particle approximation such a system has one electron band and one hole band crossing the Fermi level. If the bilayer is undoped, the Fermi surfaces of these bands coincide. Such a band structure is unstable with respect to a set of spontaneous symmetry violations. Specifically, strong on-site Coulomb repulsion stabilizes antiferromagnetic order. At small doping and low temperatures, the homogeneous phase is unstable, and experiences phase separation into an undoped antiferromagnetic insulator and a metal. The metallic phase can be either antiferromagnetic (commensurate or incommensurate) or paramagnetic depending on the system parameters. We derive the phase diagram of the system on the doping-temperature plane and find that, under certain conditions, the transition from paramagnetic to antiferromagnetic phase may demonstrate re-entrance. When disorder is present, phase separation could manifest itself as a percolative insulator-metal transition driven by doping.
10 pages, 7 figures
References in corpus (11)
- The electronic properties of graphene
- Unconventional quantum Hall effect and Berry's phase of 2pi in bilayer graphene
- Ab Initio Theory of Gate Induced Gaps in Graphene Bilayers
- Metal to insulator transition in epitaxial graphene induced by molecular doping
- Quantum Anomalous Hall State in Bilayer Graphene
- BEC-BCS crossover, phase transitions and phase separation in polarized resonantly-paired superfluids
- Strong covalent bonding between two graphene layers
- Low density ferromagnetism in biased bilayer graphene
- Band topology and quantum spin Hall effect in bilayer graphene
- Metal-insulator transition and phase separation in doped AA-stacked graphene bilayers
- Phase separation of antiferromagnetic ground states in systems with imperfect nesting
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- Stacking sensitive topological phases in a bilayer Kane-Mele-Hubbard model at quarter filling
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- Spin-density wave state in simple hexagonal graphite
- Canted antiferromagnetism and excitonic order in gated double-layer graphene
- Mean-field analysis of a Hubbard interaction on Bernal Bilayer Graphene
- Ordered states in AB bilayer graphene in SU(4)-symmetric model
- Applied electric and magnetic field effects on the bandgap formation and antiferromagnetic ordering in AA-stacked Bilayer Graphene