Externally controlled band gap in twisted bilayer graphene
arXiv:1707.08886 · doi:10.1103/PhysRevLett.120.266402
Abstract
We theoretically study the effects of electron-electron interaction in twisted bilayer graphene in applied transverse dc electric field. When the twist angle is not very small, the electronic spectrum of the bilayer consists of four Dirac cones inherited from each graphene layer. Applied bias voltage leads to the appearance of two hole-like and two electron-like Fermi surface sheets with perfect nesting among electron and hole components. Such a band structure is unstable with respect to exciton band gap opening due to the screened Coulomb interaction. The exciton order parameter is accompanied by the spin-density-wave order. The value of the gap depends on the twist angle. More importantly, it can be controlled by applied bias voltage which opens new directions in manufacturing of different nanoscale devices.
8 pages, 2 figures
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- Surfactant-Mediated Epitaxial Growth of Single-Layer Graphene in an Unconventional Orientation on SiC
- Optical imprinting of superlattices in two-dimensional materials
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- Competition of spatially inhomogeneous states in antiferromagnetic Hubbard model
- Elastic properties and mechanical stability of bilayer graphene: Molecular dynamics simulations
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- Optical Hall response of bilayer graphene: the manifestation of chiral hybridised states in broken mirror symmetry lattices
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- Canted antiferromagnetism and excitonic order in gated double-layer graphene
- Emergent exotic chirality dependent dielectricity in magnetic twisted bilayer system