Layer Antiferromagnetic State in Bilayer Graphene : A First-Principle Investigation

Abstract

The ground state of bilayer graphene is investigated by the density functional calculations with local spin density approximation. We find a ground state with layer antiferromagnetic ordering, which has been suggested by former studies based on simplified model. The calculations prove that the layer antiferromagnetic state (LAF) is stable even if the remote hopping and nonlocal Coulomb interaction are included. The gap of the LAF state is about 1.8 meV, comparable to the experimental value. The surface magnetism in BLG is of the order of $10^{-2}{\mu }_B/n{m}^2$.

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Cited by in corpus (11)

• Electronic properties of graphene-based bilayer systems
• Externally controlled band gap in twisted bilayer graphene
• Excitonic gap formation and condensation in the bilayer graphene structure
• Half Metallic Bilayer Graphene
• Triplet superconductivity and spin density wave in biased AB bilayer graphene
• Energetics of complex phase diagram in a tunable bilayer graphene probed by quantum capacitance
• Gate-induced half-metals in Bernal stacked graphene multilayer
• Electrically controllable magnetic order in the bilayer Hubbard model on honeycomb lattice --- a determinant quantum Monte Carlo study
• Superconductivity and spin density wave in AA stacked bilayer graphene
• Spontaneous charge-ordered state in Bernal-stacked bilayer graphene
• Ordered states in AB bilayer graphene in SU(4)-symmetric model