Spontaneous charge-ordered state in Bernal-stacked bilayer graphene
arXiv:2404.00692 · doi:10.1103/PhysRevResearch.6.013255
Abstract
We propose that a weakly spontaneous charge-ordered insulating state probably exists in Bernal-stacked bilayer graphene which can account for experimentally observed non-monotonic behavior of resistance as a function of the gated field, namely, the gap closes and reopens at a critical gated field. The underlying physics is demonstrated by a simple model on a corresponding lattice that contains the nearest intralayer and interlayer hoppings, electric field, and staggered potential between different sublattices. Combining density functional theory calculations with model analyses, we argue that the interlayer van der Waals interactions cooperating with ripples may be responsible for the staggered potential which induces a charge-ordered insulating state in the absence of the electric field.
arXiv comment10 pages, 7 figures
References in corpus (55)
- Magic-angle graphene superlattices: a new platform for unconventional superconductivity
- Van der Waals Density Functional for General Geometries
- The structure of suspended graphene sheets
- Correlated Insulator Behaviour at Half-Filling in Magic Angle Graphene Superlattices
- Wannier90: A Tool for Obtaining Maximally-Localised Wannier Functions
- Maximally localized Wannier functions: Theory and applications
- Biased bilayer graphene: semiconductor with a gap tunable by electric field effect
- Unconventional quantum Hall effect and Berry's phase of 2pi in bilayer graphene
- Intrinsic ripples in graphene
- Gate-induced insulating state in bilayer graphene devices
- Superconductors, Orbital Magnets, and Correlated States in Magic Angle Bilayer Graphene
- Asymmetry gap in the electronic band structure of bilayer graphene
- The electronic properties of bilayer graphene
- Observation of an Electric-Field Induced Band Gap in Bilayer Graphene by Infrared Spectroscopy
- High-Resolution Scanning Tunneling Microscopy Imaging of Mesoscopic Graphene Sheets on an Insulating Surface
- Van der Waals density functional: an appropriate exchange functional
- Spontaneous Quantum Hall States in Chirally-stacked Few-Layer Graphene Systems
- Commensuration and Interlayer Coherence in Twisted Bilayer Graphene
- Electronic structure of turbostratic graphene
- Electronic properties of graphene-based bilayer systems
- Band Structure of ABC-Stacked Graphene Trilayers
- Coulomb-driven broken-symmetry states in doubly gated suspended bilayer graphene
- Gate-tunable Topological Valley Transport in Bilayer Graphene
- Broken symmetry states and divergent resistance in suspended bilayer graphene
- Transport Spectroscopy of Symmetry-Broken Insulating States in Bilayer Graphene
- Interaction-Driven Spectrum Reconstruction in Bilayer Graphene
- Higher-Order Topological Insulator in Twisted Bilayer Graphene
- Electronic Transport in Dual-gated Bilayer Graphene at Large Displacement Fields
- Quantum Anomalous Hall State in Bilayer Graphene
- Electron-electron interactions and the phase diagram of a graphene bilayer
- Spontaneously gapped ground state in suspended bilayer graphene
- Evidence for a Spin Phase Transition at ν=0 in Bilayer Graphene
- Lattice Theory of Pseudospin Ferromagnetism in Bilayer Graphene: Competing Orders and Interaction Induced Quantum Hall States
- Minimum Conductivity and Evidence for Phase Transitions in Ultra-clean Bilayer Graphene
- Electron-Hole Asymmetric Integer and Fractional Quantum Hall Effect in Bilayer Graphene
- Competing Nematic, Anti-ferromagnetic and Spin-flux orders in the Ground State of Bilayer Graphene
- Canted antiferromagnetic phase of the quantum Hall state in bilayer graphene
- Theory of the Magnetic-Field-Induced Insulator in Neutral Graphene
- Tunable Excitons in Biased Bilayer Graphene
- Electronic multicriticality in bilayer graphene
- Instabilities of interacting electrons on the honeycomb bilayer
- Antiferromagnetism in the Hubbard Model on the Bernal-stacked Honeycomb Bilayer
- Transport Gap in Suspended Bilayer Graphene at Zero Magnetic Field
- Fermions on bilayer graphene: symmetry breaking for B=0 and nu=0
- Extended Hubbard model in undoped and doped monolayer and bilayer graphene: Selection rules and organizing principle among competing orders
- Feature-Rich Electronic Properties in Graphene Ripples
- A Family of Finite-Temperature Electronic Phase Transitions in Graphene Multilayers
- Strongly Interacting Fermions and Phases of the Casimir Effect
- Metallic Phase and Temperature Dependence of the Quantum Hall State in Bilayer Graphene
- Layer Antiferromagnetic State in Bilayer Graphene : A First-Principle Investigation
- Gross-Neveu-Heisenberg criticality from competing nematic and antiferromagnetic orders in bilayer graphene
- Half Metallic Bilayer Graphene
- Distortion of the perfect lattice structure in bilayer graphene
- Layer breathing and shear modes in multilayer graphene: A DFT-vdW study
- Gate-induced Gap in Bilayer Graphene Suppressed by Coulomb Repulsion