Metal to insulator transition in epitaxial graphene induced by molecular doping
arXiv:0807.4791 · doi:10.1103/PhysRevLett.101.086402
Abstract
The capability to control the type and amount of charge carriers in a material and, in the extreme case, the transition from metal to insulator is one of the key challenges of modern electronics. By employing angle resolved photoemission spectroscopy (ARPES) we find that a reversible metal to insulator transition and a fine tuning of the charge carriers from electrons to holes can be achieved in epitaxial bilayer and single layer graphene by molecular doping. The effects of electron screening and disorder are also discussed. These results demonstrate that epitaxial graphene is suitable for electronics applications, as well as provide new opportunities for studying the hole doping regime of the Dirac cone in graphene.
4 pages, 4 figures
References in corpus (21)
- Electric Field Effect in Atomically Thin Carbon Films
- Experimental Observation of Quantum Hall Effect and Berry's Phase in Graphene
- Two Dimensional Atomic Crystals
- Detection of Individual Gas Molecules Absorbed on Graphene
- Ultrathin epitaxial graphite: 2D electron gas properties and a route toward graphene-based nanoelectronics
- Substrate-induced band gap opening in epitaxial graphene
- Landau level degeneracy and quantum Hall effect in a graphite bilayer
- Biased bilayer graphene: semiconductor with a gap tunable by electric field effect
- Gate-induced insulating state in bilayer graphene devices
- Molecular Doping of Graphene
- Destruction of the Fermi Surface in Underdoped High Tc Superconductors
- Synthesis and characterization of atomically-thin graphite films on a silicon carbide substrate
- Origins of anomalous electronic structures of epitaxial graphene on silicon carbide
- Electronic properties of bilayer and multilayer graphene
- Velocity Renormalization and Carrier Lifetime in Graphene from Electron-Phonon Interaction
- Origin of the energy bandgap in epitaxial graphene
- Tailoring Graphene with Metals on Top
- Spectroscopic signatures of a bandwidth-controlled Mott transition at the surface of 1T-TaSe
- Impurities in a Biased Graphene Bilayer
- Electronic structure of heavily-doped graphene: the role of foreign atom states
- Van Hove Singularity and Apparent Anisotropy in the Electron-Phonon Interaction in Graphene
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- Band structure engineering of epitaxial graphene on SiC by molecular doping
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- Chemically Tailoring Semiconducting Two-Dimensional Transition Metal Dichalcogenides and Black Phosphorus
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- Localization and One-Parameter Scaling in Hydrogenated Graphene
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- Antiferromagnetic states and phase separation in doped AA-stacked graphene bilayers
- Ultrafast unbalanced electron distributions in quasicrystalline 30° twisted bilayer graphene
- Quasi-Freestanding Multilayer Graphene Films on the Carbon Face of SiC
- Gas Doping on the Topological Insulator Bi2Se3 Surface
- Quantum Monte Carlo Calculations for Carbon Nanotubes
- Theory of the spontaneous buckling of doped graphene
- The effect of sublattice symmetry breaking on the electronic properties of a doped graphene
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- Near Unity Molecular Doping Efficiency in Monolayer MoS2
- Controlling doping in graphene through a SiC substrate: A first-principles study
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- 1/N Expansion in Correlated Graphene
- Electronic Transport in Graphene: Quantum Effects and Role of Local Defects
- Single-layer behavior and slow carrier density dynamic of twisted graphene bilayer
- Tunable metal-insulator transitions in bilayer graphene by thermal annealing
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- Impurity induced spin gap asymmetry in nanoscale graphene
- Effect of a gap opening on the conductance of graphene superlattices
- Transport Properties in Gapped Bilayer Graphene
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- Theoretical study of optical conductivity of graphene with magnetic and nonmagnetic adatoms
- Tuning Magnetic Properties of Penta-Graphene Bilayers Through Doping with Boron and Oxygen
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- Chemical Bondings Induced Rich Electronic Properties of Oxygen Absorbed Few-layer Graphenes
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