Metal to insulator transition in epitaxial graphene induced by molecular doping

Abstract

The capability to control the type and amount of charge carriers in a material and, in the extreme case, the transition from metal to insulator is one of the key challenges of modern electronics. By employing angle resolved photoemission spectroscopy (ARPES) we find that a reversible metal to insulator transition and a fine tuning of the charge carriers from electrons to holes can be achieved in epitaxial bilayer and single layer graphene by molecular doping. The effects of electron screening and disorder are also discussed. These results demonstrate that epitaxial graphene is suitable for electronics applications, as well as provide new opportunities for studying the hole doping regime of the Dirac cone in graphene.

4 pages, 4 figures

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Cited by in corpus (12)

• Atomic Hole Doping of Graphene
• Tuneable electronic properties in graphene
• Electronic Transport in Dual-gated Bilayer Graphene at Large Displacement Fields
• Many-body interactions in quasi-freestanding graphene
• First-Principles Study of Electron Linewidths in Graphene
• Electron-Phonon Interactions for Optical Phonon Modes in Few-Layer Graphene
• Metal-insulator transition and phase separation in doped AA-stacked graphene bilayers
• Quasi-Freestanding Multilayer Graphene Films on the Carbon Face of SiC
• Theory of the spontaneous buckling of doped graphene
• Gap Opening by Asymmetric Doping in Graphene Bilayers
• Controlling doping in graphene through a SiC substrate: A first-principles study
• Valley symmetry breaking and gap tuning in graphene by spin doping