Valley symmetry breaking and gap tuning in graphene by spin doping
arXiv:1007.0367 · doi:10.1088/1367-2630/13/3/035023
Abstract
We study graphene with an adsorbed spin texture, where the localized spins create a periodic magnetic flux. The latter produces gaps in the graphene spectrum and breaks the valley symmetry. The resulting effective electronic model, which is similar to Haldane's periodic flux model, allows us to tune the gap of one valley independently from that of the other valley. This leads to the formation of two Hall plateaux and a quantum Hall transition. We discuss the density of states, optical longitudinal and Hall conductivities for nonzero frequencies and nonzero temperatures. A robust logarithmic singularity appears in the Hall conductivity when the frequency of the external field agrees with the width of the gap.
14 pages, 7 figures
References in corpus (28)
- Electric Field Effect in Atomically Thin Carbon Films
- The electronic properties of graphene
- The structure of suspended graphene sheets
- Control of graphene's properties by reversible hydrogenation
- Substrate-induced band gap opening in epitaxial graphene
- Valley contrasting physics in graphene: magnetic moment and topological transport
- Biased bilayer graphene: semiconductor with a gap tunable by electric field effect
- Unconventional quantum Hall effect and Berry's phase of 2pi in bilayer graphene
- Gate-induced insulating state in bilayer graphene devices
- Properties of Graphene: A Theoretical Perspective
- Valley Dependent Optoelectronics from Inversion Symmetry Breaking
- Spin Anisotropy and Quantum Hall Effect in the Kagome Lattice - Chiral Spin State based on a Ferromagnet-
- Observation of an Electric-Field Induced Band Gap in Bilayer Graphene by Infrared Spectroscopy
- Ab Initio Theory of Gate Induced Gaps in Graphene Bilayers
- Reversible Basal Plane Hydrogenation of Graphene
- Band structure engineering of epitaxial graphene on SiC by molecular doping
- Atomic Hole Doping of Graphene
- Determination of the electronic structure of bilayer graphene from infrared spectroscopy results
- Metal to insulator transition in epitaxial graphene induced by molecular doping
- On the minimal conductivity of graphene
- Sum Rules for the Optical and Hall Conductivity in Graphene
- Robust Transport Properties in Graphene
- Electronic Hamiltonian for Transition Metal Oxide Compounds
- Berry phase mediated topological thermoelectric transport in gapped single and bilayer graphene
- Random gap model for graphene and graphene bilayers
- Diffusion in the random gap model of mono- and bilayer graphene
- Optical Hall conductivity of systems with gapped spectral nodes
- Quantized Transport in Two-Dimensional Spin-Ordered Structures
Cited by in corpus (16)
- Optical properties of a semi-Dirac material
- Optical properties of massive anisotropic tilted Dirac systems
- Polar Kerr Effect and Time Reversal Symmetry Breaking in Bilayer Graphene
- Current resonances in graphene with time dependent potential barriers
- Hyperbolic plasmons in massive tilted 2D Dirac materials
- Andreev Bound states in One Dimensional Topological Superconductor
- Spontaneous mass generation due to phonons in a two-dimensional Dirac fermion system
- Optical Hall conductivity of systems with gapped spectral nodes
- Momentum-Dependent Mass and AC Hall Conductivity of Quantum Anomalous Hall Insulators and Their Relation to the Parity Anomaly
- Emergent Chern-Simons excitations due to electron--phonon interaction
- Control of valley optical conductivity and topological phases in buckled hexagonal lattice by orientation of in-plane magnetic field
- Edge modes in chiral electron double layers
- Circular edge states in photonic crystals with a Dirac node
- Quantization and quantum oscillations of the sublattice charge order in Dirac insulators
- Kerr and Faraday rotations in topological flat and dispersive band structures
- Scaling behavior of disordered lattice fermions in two dimensions