Random gap model for graphene and graphene bilayers

Abstract

The effect of a randomly fluctuating gap, created by a random staggered potential, is studied in a monolayer and a bilayer of graphene. The density of states, the one-particle scattering rate and transport properties (diffusion coefficient and conductivity) are calculated at the neutrality point. All these quantities vanish at a critical value of the average staggered potential, signaling a continuous transition to an insulating behavior. The calculations are based on the self-consistent Born approximation for the one-particle scattering rate and a massless mode of the two-particle Green's function which is created by spontaneous symmetry breaking. Transport quantities are directly linked to the one-particle scattering rate. Moreover, the effect of disorder is very weak in the case of a monolayer but much stronger in bilayer graphene.

5 pages, 1 figure

References in corpus (7)

• The structure of suspended graphene sheets
• Giant Intrinsic Carrier Mobilities in Graphene and Its Bilayer
• Gate-induced insulating state in bilayer graphene devices
• Measurement of Scattering Rate and Minimum Conductivity in Graphene
• Density inhomogeneity driven percolation metal-insulator transition and dimensional crossover in graphene nanoribbons
• Anderson localization of electron states in graphene in different types of disorder
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Cited by in corpus (2)

• Diffusion in the random gap model of mono- and bilayer graphene
• Gaps and tails in graphene and graphane