Anderson localization of electron states in graphene in different types of disorder
arXiv:0801.0027 · doi:10.1103/PhysRevB.76.214204
Abstract
Anderson localization of electron states on graphene lattice with diagonal and off-diagonal (OD) disorder in the absence of magnetic field is investigated by using the standard finite-size scaling analysis. In the presence of diagonal disorder all states are localized as predicted by the scaling theory for two-dimensional systems. In the case of OD disorder, the states at the Dirac point (E=0) are shown to be delocalized due to the specific chiral symmetry, although other states () are still localized. In OD disorder the conductance at E=0 in an rectangular system at the thermodynamical limit is calculated with the transfer-matrix technique for various values of ratio and different types of distribution functions of the OD elements . It is found that if all the 's are positive the conductance is independent of as restricted by 2 delocalized channels at E=0. If the distribution function includes the sign randomness of elements , the conductivity, rather than the conductance, becomes independent. The calculated value of the conductivity is around , in consistence with the experiments.
24 pages, 12 figures
References in corpus (17)
- Electric Field Effect in Atomically Thin Carbon Films
- Ultrathin epitaxial graphite: 2D electron gas properties and a route toward graphene-based nanoelectronics
- Weak localisation magnetoresistance and valley symmetry in graphene
- Strong suppression of weak (anti)localization in graphene
- Quantum-limited shot noise in graphene
- Quantum transport of massless Dirac fermions in graphene
- Disorder Induced Localized States in Graphene
- Intervalley scattering, long-range disorder, and effective time reversal symmetry breaking in graphene
- Effect of Disorder on Transport in Graphene
- Topological delocalization of two-dimensional massless Dirac fermions
- Robust Transport Properties in Graphene
- Quantum criticality and minimal conductivity in graphene with long-range disorder
- Low energy theory of disordered graphene
- Quantum Hall Effect of Dirac Fermions in Graphene: Disorder Effect and Phase Diagram
- On electron (anti)localization in graphene
- Impurity-assisted tunneling in graphene
- Transport regimes in surface disordered graphene sheets
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