Metal-to-insulator transition and electron-hole puddle formation in disordered graphene nanoribbons
arXiv:1109.6439 · doi:10.1103/PhysrevLett.108.066402
Abstract
The experimentally observed metal-to-insulator transition in hydrogenated graphene is numerically confirmed for actual sized graphene samples and realistic impurity concentrations. The eigenstates of our tight-binding model with substitutional disorder corroborate the formation of electron-hole-puddles with characteristic length scales comparable to the ones found in experiments. The puddles cause charge inhomogeneities and tend to suppress Anderson localization. Even though, monitoring the charge carrier quantum dynamics and performing a finite-size scaling of the local density of states distribution, we find strong evidence for the existence of localized states in graphene nanoribbons with short-range but also correlated long-range disorder.
4+ pages, 7 figures, substantially revised version, accepted for publication in Phys. Rev. Lett
References in corpus (17)
- The electronic properties of graphene
- Control of graphene's properties by reversible hydrogenation
- STM Spectroscopy of ultra-flat graphene on hexagonal boron nitride
- Emergence of magnetism in graphene materials and nanostructures
- The Kernel Polynomial Method
- Quantum transport of massless Dirac fermions in graphene
- Tunable metal-insulator transition in double-layer graphene heterostructures
- Topological delocalization of two-dimensional massless Dirac fermions
- Spatially resolved spectroscopy of monolayer graphene on SiO2
- Perfectly Conducting Channel and Universality Crossover in Disordered Nano-Graphene Ribbons
- Localization and Kosterlitz-Thouless Transition in Disordered Graphene
- Multifractal finite-size-scaling and universality at the Anderson transition
- Wave packet dynamics and valley filter in strained graphene
- Density inhomogeneity driven percolation metal-insulator transition and dimensional crossover in graphene nanoribbons
- Anderson localization of electron states in graphene in different types of disorder
- Chebyshev approach to quantum systems coupled to a bath
- Dynamical Aspects of 2D Quantum Percolation
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