Defect induced Anderson localization and magnetization in graphene quantum dots
arXiv:1711.09934 · doi:10.1016/j.ssc.2018.06.015
Abstract
We theoretically investigate the effects of atomic defect related short-range disorders and electron-electron interactions on Anderson type localization and the magnetic properties of hexagonal armchair graphene quantum dots using an extended mean-field Hubbard model. We observe that randomly distributed defects with concentrations between 1-5\% of the total number of atoms leads to localization alongside magnetic puddle-like structures. We show that localization lenght is not affected by magnetization if there is an even distribution of defects between the two sublattices of the honeycomb lattice. However, for an uneven distributions, localization is found to be significantly enhanced.
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Cited by in corpus (4)
- Effects of random atomic disorder on the magnetic stability of graphene nanoribbons with zigzag edges
- Collapse of the vacuum in hexagonal graphene quantum dots: a comparative study between the tight-binding and the mean-field Hubbard models
- Atomic Collapse in Disordered Graphene Quantum Dots
- Electronic and magnetic properties of graphene quantum dots with two charged vacancies