Uncovering the Dominant Scatterer in Graphene Sheets on SiO2

Abstract

We have measured the impact of atomic hydrogen adsorption on the electronic transport properties of graphene sheets as a function of hydrogen coverage and initial, pre-hydrogenation field-effect mobility. Our results are compatible with hydrogen adsorbates inducing intervalley mixing by exerting a short-range scattering potential. The saturation coverages for different devices are found to be proportional to their initial mobility, indicating that the number of native scatterers is proportional to the saturation coverage of hydrogen. By extrapolating this proportionality, we show that the field-effect mobility can reach $1.5\times 10^4$ cm${}^2$/V sec in the absence of the hydrogen-adsorbing sites. This affinity to hydrogen is the signature of the most dominant type of native scatterers in graphene-based field-effect transistors on SiO${}_2$.

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Cited by in corpus (23)

• Colloquium: The transport properties of graphene: An introduction
• Dirac materials
• Electronic properties of graphene-based bilayer systems
• Unified description of the dc conductivity of monolayer and bilayer graphene at finite densities based on resonant scatterers
• Magnetoresistance and Magnetic Ordering Fingerprints in Hydrogenated Graphene
• Extrinsic spin Hall effect induced by resonant skew scattering in graphene
• Electron-hole puddles in the absence of charged impurities
• A road to hydrogenating graphene by a reactive ion etching plasma
• Diffusion and criticality in undoped graphene with resonant scatterers
• Spin Transport in Hydrogenated Graphene
• Weak localization scattering lengths in epitaxial, and CVD graphene
• Electron-Hole Symmetry Breaking in Charge Transport in Nitrogen-Doped Graphene
• Metal-to-insulator transition and electron-hole puddle formation in disordered graphene nanoribbons
• Quantum Hall criticality and localization in graphene with short-range impurities at the Dirac point
• Magneto-Transport Properties of Exfoliated Graphene on GaAs
• First-principles study of bandgap effects in graphene due to hydrogen adsorption
• Electronic transport in graphene-based structures: an effective cross section approach
• Transport Spectroscopy of Sublattice-Resolved Resonant Scattering in Hydrogen-Doped Bilayer Graphene
• Color-dependent conductance of graphene with adatoms
• Microscopic linear response theory of spin relaxation and relativistic transport phenomena in graphene
• Direct comparison of graphene devices before and after transfer to different substrates
• Microscopy of hydrogen and hydrogen-vacancy defect structures on graphene devices
• Exact eigenstate analysis of finite-frequency conductivity in graphene