Resonant scattering by realistic impurities in graphene
arXiv:1003.0609 · doi:10.1103/PhysRevLett.105.056802
Abstract
We develop a first-principles theory of resonant impurities in graphene and show that a broad range of typical realistic impurities leads to the characteristic sublinear dependence of the conductivity on the carrier concentration. By means of density functional calculations various organic groups as well as ad-atoms like H absorbed to graphene are shown to create midgap states within +-0.03eV around the neutrality point. A low energy tight-binding description is mapped out. Boltzmann transport theory as well as a numerically exact Kubo formula approach yield the conductivity of graphene contaminated with these realistic impurities in accordance with recent experiments.
4 pages, 4 figures
References in corpus (14)
- The structure of suspended graphene sheets
- Giant Intrinsic Carrier Mobilities in Graphene and Its Bilayer
- A self-consistent theory for graphene transport
- Quantum Hall Ferromagnetism in Graphene
- Defect scattering in graphene
- Electronic transport in graphene: A semi-classical approach including midgap states
- Electron scattering on microscopic corrugations in graphene
- Electron transport in disordered graphene
- Tuning the effective fine structure constant in graphene: opposing effects of dielectric screening on short- and long-range potential scattering
- Resonant scattering by realistic impurities in graphene
- Monovalent impurities on graphene: midgap states and migration barriers
- Adsorbate-limited conductivity of graphene
- Midgap states in corrugated graphene: Ab-initio calculations and effective field theory
- Scattering of charge carriers by point defects in bilayer graphene
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- Colloquium: The transport properties of graphene: An introduction
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- Modeling electronic structure and transport properties of graphene with resonant scattering centers
- Electronic Transport in Dual-gated Bilayer Graphene at Large Displacement Fields
- Unified description of the dc conductivity of monolayer and bilayer graphene at finite densities based on resonant scatterers
- Gaps tunable by electrostatic gates in strained graphene
- Excitation spectrum and high energy plasmons in single- and multi-layer graphene
- Diffusion and criticality in undoped graphene with resonant scatterers
- Electronic Transport in Disordered Bilayer and Trilayer Graphene
- Interactions and magnetic moments near vacancies and resonant impurities in graphene
- Defect Induced Resonances and Magnetic Patterns in Graphene
- Effect of hydrogen adsorption on the quasiparticle spectra of graphene
- Color-dependent conductance of graphene with adatoms