Impurity resonance effects in graphene impurity location, concentration and sublattice occupation
arXiv:2005.12643 · doi:10.1103/PhysRevB.102.155414
Abstract
Unique electronic band structure of graphene with its semi-metallic features near the charge neutrality point is sensitive to impurity effects. Using the Lifshitz and Anderson impurity models, we study in detail the disorder induced spectral phenomena in the electronic band structure of graphene, namely, the formation of resonances, quasi-gaps, bound states, impurity sub-bands, and their overall impact on the electronic band restructuring and the associated Mott-like metal-insulator transitions. We perform systematic analytical and numerical study for realistic impurities, both substitutional and adsorbed, focusing on those effects that stem from the impurity adatoms locations (top, bridge, and hollow positions), concentration, host sublattice occupation, perturbation strengths, etc. Possible experimental and practical implications are discussed as well.
arXiv comment20 pages (including appendices), 17 figures
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