Resonant low-energy electron scattering on short-range impurities in graphene

Abstract

Resonant scattering of electrons with low energies (as compared to the bandwidth) on a single neutral short-range impurity in graphene is analyzed theoretically, taking into account the valley degeneracy. Resonances dramatically increase the scattering cross-section and introduce a strong energy dependence. Analysis of the tight-binding model shows that resonant scattering is typical for generic impurities as long as they are sufficiently strong (the potential is of the order of the electron bandwidth or higher).

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Cited by in corpus (5)

• Raman Spectroscopy of Graphene Edges
• Adsorbate-limited conductivity of graphene
• Anderson Transition in Disordered Graphene
• Effect of impurities in high-symmetry lattice positions on the local density of states and conductivity of graphene
• Bound electron states in the monolayer graphene with short-range impurities