Effect of inelastic collisions on multiphonon Raman scattering in graphene

Abstract

We calculate the probabilities of two- and four-phonon Raman scattering in graphene and show how the relative intensities of the overtone peaks encode information about relative rates of different inelastic processes electrons are subject to. If the most important processes are electron-phonon and electron-electron scattering, the rate of the latter can be deduced from the Raman spectra.

References in corpus (5)

• The Raman Fingerprint of Graphene
• Electric Field Effect Tuning of Electron-Phonon Coupling in Graphene
• Weak localisation magnetoresistance and valley symmetry in graphene
• Non-adiabatic Kohn-anomaly in a doped graphene monolayer
• Effect of Disorder on Transport in Graphene

Cited by in corpus (6)

• Raman Spectroscopy of Graphene Edges
• Theory of resonant multiphonon Raman scattering in graphene
• Interplay of Coulomb and electron-phonon interactions in graphene
• Resonant low-energy electron scattering on short-range impurities in graphene
• Boundary problems for Dirac electrons and edge-assisted Raman scattering in graphene
• Probing charged impurities in suspended graphene using Raman spectroscopy