Effect of inelastic collisions on multiphonon Raman scattering in graphene
arXiv:0705.1530 · doi:10.1103/PhysRevB.76.081405
Abstract
We calculate the probabilities of two- and four-phonon Raman scattering in graphene and show how the relative intensities of the overtone peaks encode information about relative rates of different inelastic processes electrons are subject to. If the most important processes are electron-phonon and electron-electron scattering, the rate of the latter can be deduced from the Raman spectra.
References in corpus (11)
- The Raman Fingerprint of Graphene
- Spatially Resolved Raman Spectroscopy of Single- and Few-Layer Graphene
- Born-Oppenheimer Breakdown in Graphene
- Electric Field Effect Tuning of Electron-Phonon Coupling in Graphene
- Weak localisation magnetoresistance and valley symmetry in graphene
- Kohn Anomalies and Electron-Phonon Interaction in Graphite
- Non-adiabatic Kohn-anomaly in a doped graphene monolayer
- Effect of Disorder on Transport in Graphene
- Unconventional quasiparticle lifetime in graphite
- Electron-Phonon Coupling and Raman Spectroscopy in Graphene
- Anomalous Quasiparticle Lifetime in Graphite: Band Structure Effects
Cited by in corpus (21)
- Raman Spectroscopy of Graphene Edges
- Theory of double-resonant Raman spectra in graphene: intensity and line shape of defect-induced and two-phonon bands
- Electron-electron interactions and doping dependence of the two-phonon Raman intensity in graphene
- Ultraviolet Raman Spectroscopy of Single and Multi-layer Graphene
- Theory of resonant multiphonon Raman scattering in graphene
- Interplay of Coulomb and electron-phonon interactions in graphene
- Resonant low-energy electron scattering on short-range impurities in graphene
- Calculation of the Raman G peak intensity in monolayer graphene: role of Ward identities
- Boundary problems for Dirac electrons and edge-assisted Raman scattering in graphene
- Signature of electronic excitations in the Raman spectrum of graphene
- Probing the electron-phonon coupling in ozone-doped graphene by Raman spectroscopy
- Chiral Polaron Formation in Graphene
- Effect of a magnetic field on the two-phonon Raman scattering in graphene
- Role of electronic excitations in magneto-Raman spectra of graphene
- Zone-Boundary Phonon Induced Mini Band Gap Formation in Graphene
- Effect of anisotropic band curvature on carrier multiplication in graphene
- Disorder-induced double resonant Raman process in graphene
- Flat-band optical phonons in twisted bilayer graphene
- Kekulé valence bond order in the honeycomb lattice optical Su-Schrieffer-Heeger Model and its relevance to Graphene
- Thermal Dynamics of Graphene Edges Investigated by Polarized Raman Spectroscopy
- Probing charged impurities in suspended graphene using Raman spectroscopy