Effect of anisotropic band curvature on carrier multiplication in graphene
arXiv:1302.5891 · doi:10.1103/PhysRevB.87.165437
Abstract
We study relaxation of an excited electron in the conduction band of intrinsic graphene at zero temperature due to production of interband electron-hole pairs. The electronic band curvature, being anisotropic because of trigonal warping, is shown to suppress relaxation for a range of directions of the initial electron momentum. For other directions, relaxation is allowed only if the curvature exceeds a finite critical value; otherwise, a non-decaying quasiparticle state is found to exist.
the revised version
References in corpus (15)
- Photo-excitation Cascade and Multiple Carrier Generation in Graphene
- Theory of double-resonant Raman spectra in graphene: intensity and line shape of defect-induced and two-phonon bands
- Ultrafast Photoluminescence from Graphene
- Quantum critical transport in clean graphene
- Tight--binding description of the quasiparticle dispersion of graphite and few--layer graphene
- Theory of resonant multiphonon Raman scattering in graphene
- Slow imbalance relaxation and thermoelectric transport in graphene
- Electron-Hole Generation and Recombination Rates for Coulomb Scattering in Graphene
- Impact of Auger processes on carrier dynamics in graphene
- Charge response function and a novel plasmon mode in graphene
- Interaction corrections to the polarization function of graphene
- Photo-excited Carrier Dynamics and Impact Excitation Cascade in Graphene
- Coulomb interacting Dirac fermions in disordered graphene
- Effect of inelastic collisions on multiphonon Raman scattering in graphene
- Analytical expressions for the polarizability of the honeycomb lattice
Cited by in corpus (9)
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- Energy Flows in Graphene: Hot Carrier Dynamics and Cooling
- Impact of doping on the carrier dynamics in graphene
- Carrier dynamics in graphene: ultrafast many-particle phenomena
- Review on carrier multiplication in graphene
- Microscopic theory of ultrafast dynamics of carriers photoexcited by THz and near-infrared linearly-polarized laser pulses in graphene