Electron-Hole Generation and Recombination Rates for Coulomb Scattering in Graphene

Abstract

We calculate electron-hole generation and recombination rates for Coulomb scattering (Auger recombination and impact ionization) in Graphene. The conduction and valence band dispersion relation in Graphene together with energy and momentum conservation requirements restrict the phase space for Coulomb scattering so that electron-hole recombination times can be much longer than 1 ps for electron-hole densities smaller than $10^{12}$ cm${}^{-2}$.

13 pages, 7 figures

References in corpus (3)

• Electric Field Effect in Atomically Thin Carbon Films
• Dielectric function, screening, and plasmons in 2D graphene
• Enhancement of Carrier Mobility in Semiconductor Nanostructures by Dielectric Engineering

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