Auger recombination in Dirac materials: A tangle of many-body effects

Abstract

The peculiar electron dispersion in Dirac materials makes lowest-order Auger processes prohibited or marginally prohibited by energy and momentum conservation laws. Thus, Auger recombination (AR) in these materials is very sensitive to many-body effects. We incorporate them at the level of the $GW$ approximation into the nonequilibrium Green's functions approach to AR and study the role of dynamic screening, spectrum broadening and renormalization in the case of weakly pumped undoped graphene. We find that incorrect treatment of many-body effects can lead to an order-of-magnitude error in the recombination rate. We show that the AR time weakly (sublinearly) depends on the background dielectric constant, which limits the possibility to control recombination by the choice of substrate. However, the AR time can be considerably prolonged by placing graphene under a metal gate or by introducing a bandgap. With carrier cooling taken into account, our results comply with experiments on photoexcited graphene.

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• Theory of the strongly nonlinear electrodynamic response of graphene: A hot electron model
• Amplification of surface plasmons in graphene-black phosphorus injection laser heterostructures
• Negative photoconductivity and hot-carrier bolometric detection of terahertz radiation in graphene-phosphorene hybrid structures
• Modulation characteristics of uncooled graphene photodetectors
• Relativistic suppression of Auger recombination in Weyl semimetals
• Feasibility of lasing in the GaAs Reststrahlen band with HgTe multiple quantum well laser diodes
• Heat capacity of nonequilibrium electron-hole plasma in graphene layers and graphene~bilayers
• Hot phonon effects and suppressed Auger recombination on 3 $\mu$m room temperature lasing in HgTe-based multiple quantum well diodes
• Impact ionization induced by terahertz radiation in HgTe quantum wells of critical thickness
• Photon drag at the junction between metal and 2d semiconductor
• Slow interband recombination promotes an anomalous thermoelectric response of the $p-n$ junctions