Feasibility of lasing in the GaAs Reststrahlen band with HgTe multiple quantum well laser diodes

Abstract

Operation of semiconductor lasers in the 20--50 $\mu$m wavelength range is hindered by strong non-radiative recombination in the interband laser diodes, and strong lattice absorption in GaAs-based quantum cascade structures. Here, we propose an electrically pumped laser diode based on multiple HgTe quantum wells with band structure engineered for Auger recombination suppression. Using a comprehensive model accounting for carrier drift and diffusion, electron and hole capture in quantum wells, Auger recombination, and heating effects, we show the feasibility of lasing at $\lambda =\mathrm{26...30}$ $\mu$m at temperatures up to 90 K. The output power in the pulse can reach up to 8 mW for microsecond-duration pulses.

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Cited by in corpus (1)

• Hot phonon effects and suppressed Auger recombination on 3 $\mu$m room temperature lasing in HgTe-based multiple quantum well diodes