Slow interband recombination promotes an anomalous thermoelectric response of the junctions
arXiv:2412.05981 · doi:10.1134/S0021364024604810
Abstract
Thermoelectric effects in junctions are widely used for energy generation with thermal gradients, creation of compact Peltier refrigerators and, most recently, for sensitive detection of infrared and terahertz radiation. It is conventionally assumed that electrons and holes creating thermoelectric current are in equilibrium and share the common quasi-Fermi level. We show that lack of interband equilibrium results in an anomalous sign and magnitude of thermoelectric voltage developed across the junction. The anomalies appear provided the diffusion length of minority carriers exceeds the size of hot spot at the junction. Normal magnitude of thermoelectric voltage is partly restored if interband tunneling at the junction is allowed. The predicted effects can be relevant to the cryogenically cooled photodetectors based on bilayer graphene and mercury cadmium telluride quantum wells.
5 pages, 3 figures
References in corpus (10)
- Evidence of Klein tunneling in graphene p-n junctions
- Terahertz and Infrared Spectroscopy of Gated Large-Area Graphene
- Fast and Sensitive Terahertz Detection Using an Antenna-Integrated Graphene pn Junction
- Slow imbalance relaxation and thermoelectric transport in graphene
- Hydrodynamics in graphene: Linear-response transport
- Plasmonic antenna coupling to hyperbolic phonon-polaritons for sensitive and fast mid-infrared photodetection with graphene
- Population Inversion in Monolayer and Bilayer Graphene
- Ultralow-noise terahertz detection by p-n junctions in gapped bilayer graphene
- Review on carrier multiplication in graphene
- Theory of the effective Seebeck coefficient for photoexcited 2D materials: the case of graphene