Evidence of Klein tunneling in graphene p-n junctions

Abstract

Transport through potential barriers in graphene is investigated using a set of metallic gates capacitively coupled to graphene to modulate the potential landscape. When a gate-induced potential step is steep enough, disorder becomes less important and the resistance across the step is in quantitative agreement with predictions of Klein tunneling of Dirac fermions up to a small correction. We also perform magnetoresistance measurements at low magnetic fields and compare them to recent predictions.

arXiv commentMajor changes made: 1) Taking into account properly the contribution of the resistance of monopolar junctions to the odd part of the resistance. To better present the results we use a fitting parameter for the amplitude of screening in graphene. 2) Wrong data for the diffusive model in figures 3, 9 and 10 was plotted in former version. 3) Figure 5 moved to EPAPS

References in corpus (11)

• Chiral tunneling and the Klein paradox in graphene
• Gate-induced insulating state in bilayer graphene devices
• Charged Impurity Scattering in Graphene
• Andreev reflection and Klein tunneling in graphene
• Selective transmission of Dirac electrons and ballistic magnetoresistance of \textit{n-p} junctions in graphene
• Transport measurements across a tunable potential barrier in graphene
• Electronic transport and quantum Hall effect in bipolar graphene p-n-p junction
• Conductance of p-n-p graphene structures with 'air-bridge' top gates
• Nonlinear screening and ballistic transport in a graphene p-n junction
• Fabrication of Graphene p-n-p Junctions with Contactless Top Gates
• Effect of disorder on a graphene p-n junction

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