Spin-orbit effects in a graphene bipolar pn junction
arXiv:0906.0775 · doi:10.1209/0295-5075/87/47005
Abstract
A graphene junction is studied theoretically in the presence of both intrinsic and Rashba spin-orbit couplings. We show that a crossover from perfect reflection to perfect transmission is achieved at normal incidence by tuning the perpendicular electric field. By further studying angular dependent transmission, we demonstrate that perfect reflection at normal incidence can be clearly distinguished from trivial band gap effects. We also investigate how spin-orbit effects modify the conductance and the Fano factor associated with a potential step in both and cases.
6 pages, 5 figures, conductance and Fano factor plots added
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- Effect of back-gate on contact resistance and on channel conductance in graphene-based field-effect transistors
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- Efficient quantum transport simulation for bulk graphene heterojunctions
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- Gate-induced carrier density modulation in bulk graphene: Theories and electrostatic simulation using Matlab pdetool
- Spin-orbit interaction and snake states in graphene - junctions
- The influence of anisotropic Rashba spin-orbit coupling on current-induced spin polarization in graphene