Efficient quantum transport simulation for bulk graphene heterojunctions
arXiv:1206.0266 · doi:10.1103/PhysRevB.86.115455
Abstract
The quantum transport formalism based on tight-binding models is known to be powerful in dealing with a wide range of open physical systems subject to external driving forces but is, at the same time, limited by the memory requirement's increasing with the number of atomic sites in the scattering region. Here we demonstrate how to achieve an accurate simulation of quantum transport feasible for experimentally sized bulk graphene heterojunctions at a strongly reduced computational cost. Without free tuning parameters, we show excellent agreement with a recent experiment on Klein backscattering [A. F. Young and P. Kim, Nature Phys. 5, 222 (2009)].
5 pages, 3 figures
References in corpus (22)
- Electric Field Effect in Atomically Thin Carbon Films
- The electronic properties of graphene
- Chiral tunneling and the Klein paradox in graphene
- Electronic transport in two dimensional graphene
- Andreev reflection and Klein tunneling in graphene
- Quantum interference and Klein tunneling in graphene heterojunctions
- Selective transmission of Dirac electrons and ballistic magnetoresistance of \textit{n-p} junctions in graphene
- Evidence of Klein tunneling in graphene p-n junctions
- Transport measurements across a tunable potential barrier in graphene
- Electronic transport and quantum Hall effect in bipolar graphene p-n-p junction
- Klein tunneling in graphene: optics with massless electrons
- Klein Backscattering and Fabry-Perot Interference in Graphene Heterojunctions
- Conductance of p-n-p graphene structures with 'air-bridge' top gates
- Nonlinear screening and ballistic transport in a graphene p-n junction
- Fabrication of Graphene p-n-p Junctions with Contactless Top Gates
- Conductance asymmetry of graphene pn junction
- Contact resistance and shot noise in graphene transistors
- Spin-dependent Klein tunneling in graphene: Role of Rashba spin-orbit coupling
- Electronic transport properties of a tilted graphene pn junction
- Signatures of Klein tunneling in disordered graphene p-n-p junctions
- Spin-orbit effects in a graphene bipolar pn junction
- Ballistic transport of graphene pnp junctions with embedded local gates
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- The recursive Green's function method for graphene
- Ballistic interferences in suspended graphene
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- The Electronic Thickness of Graphene
- Tuning anti-Klein to Klein tunneling in bilayer graphene
- Twist- and gate-tunable proximity spin-orbit coupling, spin relaxation anisotropy, and charge-to-spin conversion in heterostructures of graphene and transition-metal dichalcogenides
- Scattering-induced and highly tunable by gate damping-like spin-orbit torque in graphene doubly proximitized by two-dimensional magnet CrGeTe and WS
- Theory of carrier density in multigated doped graphene sheets with quantum correction
- Band gap and broken chirality in single-layer and bilayer graphene
- Electrostatic Superlattices on Scaled Graphene Lattices
- Theory of spin-orbit induced spin relaxation in functionalized graphene
- Large-scale tight-binding simulations of quantum transport in ballistic graphene
- General Green's function formalism for layered systems: Wave function approach
- Quantum capacitive coupling between large-angle twisted graphene layers
- Cloning of Zero Modes in One-Dimensional Graphene Superlattices
- Characterization of Hydrogen Plasma Defined Graphene Edges
- Gate-induced carrier density modulation in bulk graphene: Theories and electrostatic simulation using Matlab pdetool
- Four-band effective square lattice model for Bernal-stacked bilayer graphene
- Reconciling Kubo and Keldysh Approaches to Fermi-Sea-Dependent Nonequilibrium Observables: Application to Spin Hall Current and Spin-Orbit Torque in Spintronics