Charge transport in pn and npn junctions of silicene
arXiv:1303.6599 · doi:10.1103/PhysRevB.88.085322
Abstract
We investigate charge transport of pn and npn junctions made from silicene, Si analogue of graphene. The conductance shows the distinct gate-voltage dependences peculiar to the topological and non-topological phases, where the topological phase transition is caused by external electric field. Namely, the conductance is suppressed in the np regime when the both sides are topological, while in the nn regime when one side is topological and the other side is non-topological. Furthermore, we find that the conductance is almost quantized to be 0, 1 and 2. Our findings will open a new way to nanoelectronics based on silicene.
9 pages, 12 figures
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Cited by in corpus (8)
- Spin effects in thermoelectric properties of Al and P doped zigzag silicene nanoribbons
- Topological phase and edge states dependence of the RKKY interaction in zigzag silicene nanoribbon
- Focusing RKKY interaction by graphene P-N junction
- Relaxation times and charge conductivity of silicene
- Large magnetoresistance dips and perfect spin-valley filter induced by topological phase transitions in silicene
- The perfect spin injection in silicene FS/NS junction
- Electric spin and valley Hall effects
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