Gated Silicene as a tunable source of nearly 100% spin-polarized electrons

Abstract

Silicene is a one-atom-thick 2D crystal of silicon with a hexagonal lattice structure that is related to that of graphene but with atomic bonds that are buckled rather than flat. This buckling confers advantages on silicene over graphene, because it should, in principle, generate both a band gap and polarized spin-states that can be controlled with a perpendicular electric field. Here we use first-principles calculations to show that field-gated silicene possesses two gapped Dirac cones exhibiting nearly 100% spin-polarization, situated at the corners of the Brillouin zone. Using this fact, we propose a design for a silicene-based spin-filter that should enable the spin-polarization of an output current to be switched electrically, without switching external magnetic fields. Our quantum transport calculations indicate that the proposed designs will be highly efficient (nearly 100% spin polarization) and robust against weak disorder and edge imperfections. We also propose a Y-shaped spin/valley separator that produces spin-polarized current at two output terminals with opposite spins.

References in corpus (8)

• The electronic properties of graphene
• Topological Insulators with Inversion Symmetry
• Valley polarization in MoS2 monolayers by optical pumping
• Substrate-induced band gap opening in epitaxial graphene
• Valley filter and valley valve in graphene
• Valley-Polarized Metals and Quantum Anomalous Hall Effect in Silicene
• Electronic structure of silicon-based nanostructures
• Graphene valley filter using a line defect

Cited by in corpus (94)

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• Is Silicene the Next Graphene?
• Conductance, Valley and Spin polarization and Tunnelling magneto-resistance in ferromagnetic-normal-ferromagnetic junctions of silicene
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