Efficient Dual Spin-Valley Filter In Strained Silicene

Abstract

We propose a highly efficient silicene device for dual spin and valley filtering. The device consists of two different barrier regions: the first is a region under uniaxial strain, with an exchange field induced by adjacent top and bottom magnetic insulators, while the second comprises of two ferromagnetic stripes which produces a delta-function fringe magnetic field, and a gate electrode to modify the electrochemical potential. For the first region, we investigated the effect of the uniaxial strain in inducing angular separation of the two valley spins in momentum-space, and further spin separation by the spin dependent electric potential induced by the exchange field. We then evaluated the delta-function magnetic field and electrochemical potential combination in the second region to yield the transverse displacement for the selection of the requisite spin-valley combination. We demonstrated the optimal conditions in the first barrier to induce a highly anisotropic transmission profile, which enables controllable and efficient filtering (> 90% efficiency) by the second region for all four spin-valley combinations. Based on the analytical results, we predict the feasibility of experimental realization of dual spin-valley silicene-based filtering device.

10 pages, 3 figures

References in corpus (11)

• Electric Field Effect in Atomically Thin Carbon Films
• The electronic properties of graphene
• Uniaxial Strain in Graphene by Raman Spectroscopy: G peak splitting, Gruneisen Parameters and Sample Orientation
• Ripple Texturing of Suspended Graphene Atomic Membranes
• All-graphene integrated circuits via strain engineering
• Valley-Polarized Metals and Quantum Anomalous Hall Effect in Silicene
• Gated Silicene as a tunable source of nearly 100% spin-polarized electrons
• Spin-Valleytronics in Silicene: Quantum-Spin-Quantum-Anomalous Hall Insulators and Single-Valley Semimetals
• Valley-Spin Polarization in the Magneto-Optical Response of Silicene and Other Similar 2D Crystals
• Valley filter in strain engineered graphene
• Current-voltage (I-V) characteristics of armchair graphene nanoribbons under uniaxial strain

Cited by in corpus (9)

• Klein tunneling in Weyl semimetals under the influence of magnetic field
• Electrically tunable valley polarization in Weyl semimetals with tilted energy dispersion
• Strain-controlled valley and spin separation in silicene heterojunctions
• Perfect valley filter in strained graphene with single barrier region
• Conductance modulation in Weyl semimetals with tilted energy dispersion without a band gap
• Anomalous tunneling characteristic of Weyl semimetals with tilted energy dispersion
• Strain control of real-and lattice-spin currents in a silicene junction
• Perfect valley polarization in MoS2
• Geometrical and electrical modulation on the transport property of silicene constrictions