Conductance modulation in Weyl semimetals with tilted energy dispersion without a band gap
arXiv:1701.01259 · doi:10.1063/1.4989993
Abstract
We investigate the tunneling conductance of Weyl semimetal with tilted energy dispersion by considering electron transmission through a p-n-p junction with one-dimensional electric and magnetic barrier. In the presence of both electric and magnetic barriers, we found that a large conductance gap can be produced by the aid of tilted energy dispersion without a band gap. The origin of this effect is the shift of the electrons wave-vector at barrier boundaries caused by i) the pseudo-magnetic field induced by electrical potential, i.e., a newly discovered feature that is only possible in the materials possessing tilted energy dispersion, ii) the real magnetic field induced by ferromagnetic layer deposited on the top of the system. We use realistic barrier structure applicable in current nanotechnology and analyze the temperature dependence of the tunneling conductance. The new approach presented here may resolve a major problem of possible transistor applications in topological semimetals, i.e., the absence of normal backscattering and gapless band structure.
References in corpus (33)
- The electronic properties of graphene
- Energy Band Gap Engineering of Graphene Nanoribbons
- Energy Gaps in Graphene Nanoribbons
- Electronic Structure of Pyrochlore Iridates: From Topological Dirac Metal to Mott Insulator
- Half-Metallic Graphene Nanoribbons
- Control of graphene's properties by reversible hydrogenation
- Chiral tunneling and the Klein paradox in graphene
- Discovery of a Weyl Fermion Semimetal and Topological Fermi Arcs
- Type-II Weyl Semimetals
- Experimental discovery of Weyl semimetal TaAs
- Charged Impurity Scattering in Graphene
- Observation of Weyl nodes in TaAs
- Discovery of a Weyl Fermion semimetal state in NbAs
- Gate-Tunable Negative Longitudinal Magnetoresistance in the Predicted Type-II Weyl Semimetal WTe2
- Predicted Unusual Magnetoresponse in Type-II Weyl Semimetals
- TaIrTe4 a ternary Type-II Weyl semi-metal
- Valley filter in strain engineered graphene
- Correlated charged impurity scattering in graphene
- Quantum transport in Dirac materials: signatures of tilted and anisotropic Dirac and Weyl cones
- Theory of huge tunneling magnetoresistance in graphene
- Topological Imbert-Fedorov shift in Weyl semimetals
- Chirality Hall Effect in Weyl Semimetals
- Topology and Interactions in a Frustrated Slab: Tuning from Weyl Semimetals to C > 1 Fractional Chern Insulators
- Effect of edge transmission and elastic scattering on the resistance of magnetic barriers
- Klein tunneling in Weyl semimetals under the influence of magnetic field
- Generating controllable type-II Weyl points via periodic driving
- Local Hall effect in hybrid ferromagnetic/semiconductor devices
- Perfect valley filter in strained graphene with single barrier region
- Efficient Dual Spin-Valley Filter In Strained Silicene
- Tunable Weyl Semi-metal and its Possible Realization in Optical Lattice
- Influence of Fermi arc states and double Weyl node on tunneling in a Dirac semimetal
- Klein tunneling and magnetoresistance of \textit{p-n} junctions in Weyl semimetals
- Electronic properties in a quantum well structure of Weyl semimetal
Cited by in corpus (5)
- Photogalvanic effect in Weyl semimetals
- Klein tunneling and electron optics in Dirac-Weyl fermion systems with tilted energy dispersion
- Electrically tunable valley polarization in Weyl semimetals with tilted energy dispersion
- Perpendicular Andreev reflection: Solid state signature of black hole horizon
- Conservation of chirality at a junction between two Weyl semimetals