Strain-controlled valley and spin separation in silicene heterojunctions
arXiv:1707.02465 · doi:10.1103/PhysRevB.97.085427
Abstract
We adopt the tight-binding mode-matching method to study the strain effect on silicene heterojunctions. It is found that valley- and spin-dependent separation of electrons cannot be achieved by the electric field only. When a strain and an electric field are simultaneously applied to the central scattering region, not only are the electrons of valleys K and K' separated into two distinct transmission lobes in opposite transverse directions, but the up-spin and down-spin electrons will also move in the two opposite transverse directions. Therefore, one can realize an effective modulation of valley- and spin-dependent transport by changing the amplitude and the stretch direction of the strain. The phenomenon of the strain-induced valley and spin deflection can be exploited for silicene-based valleytronics devices.
arXiv comment6 pages, 6 figures
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Cited by in corpus (7)
- Magnetotransport properties of 8-Pmmn borophene: effects of Hall field and strain
- Spin-valley polarized edge states and quantum anomalous Hall states controlled by side potential in 2D honeycomb lattices
- Band bending and zero-conductance resonances controlled by edge electric fields in zigzag silicene nanoribbons
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- Controlling electron flow in anisotropic Dirac materials heterojunctions: a super-diverging lens
- Valley-dependent transport in strain engineering graphene heterojunctions
- Geometrical and electrical modulation on the transport property of silicene constrictions