Quantum spin Hall effect induced by electric field in silicene
arXiv:1212.4577 · doi:10.1063/1.4790147
Abstract
We investigate the transport properties in a zigzag silicene nanoribbon in the presence of an external electric field. The staggered sublattice potential and two kinds of Rashba spin-orbit couplings can be induced by the external electric field due to the buckled structure of the silicene. A bulk gap is opened by the staggered potential and gapless edge states appear in the gap by tuning the two kinds of Rashba spin-orbit couplings properly. Furthermore, the gapless edge states are spin-filtered and are insensitive to the non-magnetic disorder. These results prove that the quantum spin Hall effect can be induced by an external electric field in silicene, which may have certain practical significance in applications for future spintronics device.
4 pages, 5 figures
References in corpus (11)
- Quantum Spin Hall Effect and Topological Phase Transition in HgTe Quantum Wells
- Quantum Spin Hall Insulator State in HgTe Quantum Wells
- Intrinsic and Rashba Spin-orbit Interactions in Graphene Sheets
- Valley-Polarized Metals and Quantum Anomalous Hall Effect in Silicene
- Spin-orbit coupling in curved graphene, fullerenes, nanotubes, and nanotube caps
- Spin-orbit gap of graphene: First-principles calculations
- Quantum Spin Hall Effect in Inverted Type II Semiconductors
- Imaging mesoscopic spin Hall flow: Spatial distribution of local spin currents and spin densities in and out of multiterminal spin-orbit coupled semiconductor nanostructures
- Universal spin-Hall conductance fluctuations in two dimensions
- Spin-polarized current induced by a local exchange field in a silicene nanoribbon
- Topological Phase Transition and Electrically Tunable Diamagnetism in Silicene