Quantum spin Hall effect induced by electric field in silicene

Abstract

We investigate the transport properties in a zigzag silicene nanoribbon in the presence of an external electric field. The staggered sublattice potential and two kinds of Rashba spin-orbit couplings can be induced by the external electric field due to the buckled structure of the silicene. A bulk gap is opened by the staggered potential and gapless edge states appear in the gap by tuning the two kinds of Rashba spin-orbit couplings properly. Furthermore, the gapless edge states are spin-filtered and are insensitive to the non-magnetic disorder. These results prove that the quantum spin Hall effect can be induced by an external electric field in silicene, which may have certain practical significance in applications for future spintronics device.

4 pages, 5 figures

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Cited by in corpus (15)

• Topological Phases in Two-Dimensional Materials: A Brief Review
• Nanomaterials for Quantum Information Science and Engineering
• Quantum Spin Hall Effect in IV-VI Topological Crystalline Insulators
• Group theoretical and topological analysis of the quantum spin Hall effect in silicene
• Strain-controlled valley and spin separation in silicene heterojunctions
• Interplay between edge and bulk states in silicene nanoribbon
• Zero-field and time-reserval-symmetry-broken topological phase transitions in graphene
• Role of line defect in the bandgap and transport properties of silicene nanoribbons
• Electron spin dynamics of two-dimensional layered materials
• Valley polarization in graphene-silicene-graphene heterojunction
• Magnetic oscillations in silicene
• Quantum Hall Effects in a Non-Abelian Honeycomb Lattice
• Low-temperature linear transport of two-dimensional massive Dirac fermions in silicene: residual conductivity and spin/valley Hall effects
• Power loss of hot Dirac fermions in silicene and its near equivalence with graphene
• Effects of electron-impurity scattering on density of states in silicene: impurity bands and band-gap narrowing