Enhancement of Rashba spin-orbit coupling by electron-electron interaction
arXiv:1608.05841 · doi:10.1039/C6RA16289D
Abstract
We studied how the electron-electron (e-e) interaction enhances the strength of the Rashba spin-orbit coupling (RSOC) and opens the possibility of generating a spin-polarized output current from an unpolarized electric current without any magnetic elements. In this regard, we proposed a novel design of a graphene-like junction based on the - interaction and the . The results showed that the - interaction with opens a spin energy gap and extremely enhances the in this spin energy gap. Interestingly, the junction produces a large spin-polarized current and could act as a high-efficiency spin filter device (nearly 100\% spin polarization) at room temperature even at low Rashba and e-e interaction strengths. However, with an appropriate design, we showed that RSOC could strongly weaken the spin-polarized current and the spin energy gap, which is solely produced by the - interaction, but a high spin polarization persists in some energy ranges.
References in corpus (29)
- The electronic properties of graphene
- Quantum Spin Hall Effect in Graphene
- Topological Order and the Quantum Spin Hall Effect
- Two and one-dimensional honeycomb structures of silicon and germanium
- Quantum Spin Hall Effect in Silicene
- New Perspectives for Rashba Spin-Orbit Coupling
- Basic obstacle for electrical spin-injection from a ferromagnetic metal into a diffusive semiconductor
- Valley filter and valley valve in graphene
- Intrinsic and Rashba Spin-orbit Interactions in Graphene Sheets
- Spin-orbit coupling in curved graphene, fullerenes, nanotubes, and nanotube caps
- Room temperature magnetic order on zigzag edges of narrow graphene nanoribbons
- Possible Spin Polarization in a One-Dimensional Electron Gas
- Impurity induced spin-orbit coupling in graphene
- Rashba effect in the graphene/Ni(111) system
- Gated Silicene as a tunable source of nearly 100% spin-polarized electrons
- All-electric all-semiconductor spin field effect transistors
- Kondo model for the "0.7 anomaly" in transport through a quantum point contact
- Observation of a One-Dimensional Spin-Orbit Gap in a Quantum Wire
- All-Electric Quantum Point Contact Spin Valve
- Bias-controllable intrinsic spin polarization in a quantum dot
- Half-Metallic Silicene and Germanene Nanoribbons: towards High-Performance Spintronics Device
- Odd and even Kondo effects from emergent localisation in quantum point contacts
- Phase coherent quantum mechanical spin tranport in a weakly disordered quasi one-dimensional channel
- Symmetries of quantum transport with Rashba spin-orbit: Graphene spintronics
- The Effect of Ramsauer Type Transmission Resonances on the Conductance Modulation of Spin Interferometers
- From Coulomb blockade to the Kondo regime in a Rashba dot
- Possible origin of the 0.5 plateau in the ballistic conductance of quantum point contacts
- Magnetic edge states in Aharonov-Bohm graphene quantum rings
- Generation of fully spin-polarized currents in three-terminal graphene-based transistors