Generation of fully spin-polarized currents in three-terminal graphene-based transistors
arXiv:1510.05103 · doi:10.1039/c5ra13167g
Abstract
We propose three-terminal spin devices with graphene nanoribbons (terminals) and a graphene flake (channel) to generate a highly spin-polarized current without an external magnetic field or ferromagnetic electrodes. The Hubbard repulsion within the mean-field approximation plays the main role to separate the unpolarized electric current at the source terminal into spin-polarized currents at the drain terminals. It is shown that by modulating one of the drain voltages, a fully spin-polarized current can be generated in the other drain terminal. In addition, the geometry of the channel and the arrangement of edge atoms have significant impact on the efficiency of spin currents in the three-terminal junctions which might be utilized in generation of graphene-based spin transistors.
arXiv comment5 pages, 4 figures
References in corpus (13)
- Electronic spin transport and spin precession in single graphene layers at room temperature
- Electronic and Magnetic Properties of Nanographite Ribbons
- Magnetism in graphene nano-islands
- Magnetic Correlations at Graphene Edges
- Finite-element theory of transport in ferromagnet-normal metal systems
- Giant magnetoresistance in ultra-small Graphene based devices
- Contact resistance in graphene-based devices
- Current-voltage (I-V) characteristics of armchair graphene nanoribbons under uniaxial strain
- Pure spin currents and associated electrical voltage
- A spin-filter device based on armchair graphene nanoribbons
- Quantum-interference-controlled three-terminal molecular transistors based on a single ring-shaped-molecule connected to graphene nanoribbon electrodes
- Spin-orbit interaction induced spin selective transmission through a multi-terminal mesoscopic ring
- Tunnel Magnetoresistance of a Single-Molecule Junction