Tunnel Magnetoresistance of a Single-Molecule Junction

Abstract

Based on the non-equilibrium Green's function (NEGF) technique and the Landauer-Büttiker theory, the possibility of a molecular spin-electronic device, which consists of a single C${}_{60}$ molecule attached to two ferromagnetic electrodes with finite cross sections, is investigated. By studying the coherent spin-dependent transport through the energy levels of the molecule, it is shown that the tunnel magnetoresistance (TMR) of the molecular junction depends on the applied voltages and the number of contact points between the device electrodes and the molecule. The TMR values more than 60% are obtained by adjusting the related parameters.

5 pages, 3 figures

References in corpus (8)

• Spin-dependent transport in molecular tunnel junctions
• Carbon Nanotube Based Magnetic Tunnel Junctions
• Molecular Spintronics: Spin-Dependent Electron Transport in Molecular Wires
• Enhanced magneto-transport at high bias in quasi-magnetic tunnel junctions with EuS spin-filter barriers
• Inverse Magnetoresistance of Molecular Junctions
• Electronic transport through a C${}_{60}$ molecular bridge: The role of single and multiple contacts
• Giant magnetoresistance of multiwall carbon nanotubes: modeling the tube/ferromagnetic-electrode burying contact
• Temperature dependence of surface magnetization in local-moment systems

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• Scanning tunneling spectroscopy and Dirac point resonances due to a single Co adatom on gated graphene
• Generation of fully spin-polarized currents in three-terminal graphene-based transistors
• The effect of vacancy-induced magnetism on electronic transport in armchair carbon nanotubes