Bias-controllable intrinsic spin polarization in a quantum dot

Abstract

We propose a novel scheme to efficiently polarize and manipulate the electron spin in a quantum dot. This scheme is based on the spin-orbit interaction and it possesses following advantages: (1) The direction and the strength of the spin polarization is well controllable and manipulatable by simply varying the bias or the gate voltage. (2) The spin polarization is quite large even with a weak spin-orbit interaction. (3) Both electron-electron interaction and multi-energy levels do not weaken but strengthen the spin polarization. (4) It has the short spin flip time. (5) The device is free of a magnetic field or a ferromagnetic material. (6) It can be easily realized with present technology.

9 pages, 5 figures

References in corpus (8)

• Dissipationless Quantum Spin Current at Room Temperature
• Experimental observation of the spin-Hall effect in a two dimensional spin-orbit coupled semiconductor system
• Quantum transport theory for nanostructures with Rashba spin-orbital interaction
• Can Non-Equilibrium Spin Hall Accumulation be Induced in Ballistic Nanostructures?
• Spontaneous spin-polarized current in a nonuniform Rashba interaction system
• Spin Accumulation and Equilibrium Currents at the Edge of 2DEGs with Spin-Orbit Coupling
• Signatures of spin-related phases in transport through regular polygons
• Spin accumulation in ballistic Rashba bar

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