Tunneling magnetoresistance and spin-valley polarization of aperiodic magnetic silicene superlattices
arXiv:2209.13783 · doi:10.1088/1361-648X/acaae2
Abstract
Magnetic silicene superlattices (MSSLs) are versatile structures with spin-valley polarization and tunneling magnetoresistance (TMR) capabilities. However, the oscillating transport properties related to the superlattice periodicity impede stable spin-valley polarization states reachable by reversing the magnetization direction. Here, we show that aperiodicity can be used to improve the spin-valley polarization and TMR by reducing the characteristic conductance oscillations of periodic MSSLs (P-MSSLs). Using the Landauer-Büttiker formalism and the transfer matrix method, we investigate the spin-valley polarization and the TMR of Fibonacci (F-) and Thue-Morse (TM-) MSSLs as typical aperiodic superlattices. Our findings indicate that aperiodic superlattices with higher disorder provide better spin-valley polarization and TMR values. In particular, TM-MSSLs reduce considerably the conductance oscillations giving rise to two well-defined spin-valley polarization states and a better TMR than F- and P-MSSLs. F-MSSLs also improve the spin-valley polarization and TMR, however they depend strongly on the parity of the superlattice generation.
arXiv comment11 pages, 13 figures
References in corpus (19)
- Two and one-dimensional honeycomb structures of silicon and germanium
- Quantum Spin Hall Effect in Silicene
- Epitaxial Growth of a Silicene Sheet
- Low-energy effective Hamiltonian involving spin-orbit coupling in Silicene and Two-Dimensional Germanium and Tin
- Electrically Tunable Band Gap in Silicene
- Valley-Polarized Metals and Quantum Anomalous Hall Effect in Silicene
- Evidence for Dirac Fermions in a honeycomb lattice based on silicon
- Topological Insulator and Helical Zero Mode in Silicene under Inhomogeneous Electric Field
- Van der Waals heterostructures for spintronics and opto-spintronics
- Colloquium: Spintronics in graphene and other two-dimensional materials
- Gated Silicene as a tunable source of nearly 100% spin-polarized electrons
- Controllable valley and spin transports in ferromagnetic silicene junctions
- Valley filter in strain engineered graphene
- On the electronic structure of silicene on Ag substrate: strong hybridization effects
- Recent progress and challenges in magnetic tunnel junctions with 2D materials for spintronic applications
- Spin- and valley-dependent transport through arrays of ferromagnetic silicene junctions
- Conductance, Valley and Spin polarization and Tunnelling magneto-resistance in ferromagnetic-normal-ferromagnetic junctions of silicene
- Anomalous magnetic transport in ferromagnetic graphene junctions
- Giant magnetoresistance and anomalous transport in phosphorene-based multilayers with noncollinear magnetization