Controllable valley and spin transports in ferromagnetic silicene junctions

Abstract

We investigate charge, valley, and spin transports in normal/ferromagnetic/normal silicene junc- tion. We show that the charge, valley, and spin conductances in this junction oscillate with the length of the ferromagnetic silicene. It is also found that the current through this junction is valley and spin polarized due to the coupling between valley and spin degrees of freedom, and the valley and spin polarizations can be tuned by local application of a gate voltage. In particular, we find fully valley and spin polarized current by applying the electric field. We also obtain the condition for observing the fully valley and spin polarized current.

4 pages, 6 figures

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• Spin-filtered and Spatially Distinguishable Crossed Andreev Reflection in a Silicene-Superconductor Junction
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• Relaxation times and charge conductivity of silicene
• Photoenhanced spin/valley polarization and tunneling magnetoresistance in ferromagnetic-normal-ferromagnetic silicene junction
• The role of spin-orbit coupling in topologically protected interface states in Dirac materials
• Tunneling magnetoresistance and spin-valley polarization of aperiodic magnetic silicene superlattices
• Lattice-pseudospin and spin-valley polarizations in dual ferromagnetic-gated silicene junction
• Strain control of real-and lattice-spin currents in a silicene junction
• Trigonal warping induced terraced spin texture and nearly perfect spin polarization in graphene with Rashba effect
• Controllable intrinsic DC spin/valley Hall conductivity in ferromagnetic silicene: Exploring a fully spin/valley polarized transport
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• The perfect spin injection in silicene FS/NS junction