Band-offset-induced lateral shift of valley electrons in ferromagnetic MoS/WS planar heterojunctions
arXiv:1803.03811 · doi:10.1063/1.5012775
Abstract
Low-energy coherent transport and Goos-Hänchen (GH) lateral shift of valley electrons in planar heterojunctions composed of normal MoS and ferromagnetic WS monolayers are theoretically investigated. Two types of heterojunctions in the forms of WS/MoS/WS (type-A) and MoS/WS/MoS (type-B) with incident electrons in MoS region are considered in which the lateral shift of electrons is induced by band alignments of the two constituent semiconductors. It is shown that the type-A heterojunction can act as an electron waveguide due to electron confinement between the two WS/MoS interfaces which cause the incident electrons with an appropriate incidence angle to propagate along the interfaces. In this case the spin- and valley-dependent GH shifts of totally reflected electrons from the interface lead to separated electrons with distinct spin-valley indexes after traveling a sufficiently long distance. In type-B heterojunction, however, transmission resonances occur for incident electron beams passing through the structure, and large spin- and valley-dependent lateral shift values in propagating states can be achieved. Consequently, the transmitted electrons are spatially well-separated into electrons with distinct spin-valley indexes. Our findings reveal that the planar heterojunctions of transition metal dichalcogenides can be utilized as spin-valley beam filter and/or splitter without external gating.
arXiv comment9 pages, 7 figures
References in corpus (24)
- Coupled spin and valley physics in monolayers of MoS2 and other group-VI dichalcogenides
- Single-Layer MoS2 Phototransistors
- Mobility engineering and metal-insulator transition in monolayer MoS2
- Electroluminescence in Single Layer MoS2
- Spin transport in proximity induced ferromagnetic graphene
- Valley-dependent Brewster angles and Goos-Hanchen effect in strained graphene
- Observation of Goos-Hänchen shifts in metallic reflection
- Quantum Goos-Hanchen effect in graphene
- Controllable valley and spin transports in ferromagnetic silicene junctions
- Controllable spin transport in ferromagnetic graphene junctions
- Electron optics with magnetic vector potential barriers in graphene
- Electronic analogy of Goos-Hänchen effect: a review
- Neutron reflection from condensed matter, the Goos-Hänchen effect and coherence
- Spin-valley qubit in nanostructures of monolayer semiconductors: Optical control and hyperfine interaction
- Giant Goos-Hänchen Shift in Graphene Double-barrier Structures
- Goos-Hänchen-like shifts for Dirac fermions in monolayer graphene barrier
- Goos-Hänchen-Like Shifts in Atom Optics
- Optical beam shifts in graphene and single-layer boron-nitride
- Goos-Hanchen shift of a spin-wave beam transmitted through anisotropic interface between two ferromagnets
- Electronic beam shifts in monolayer graphene superlattice
- Voltage-tunable lateral shifts of ballistic electrons in semiconductor quantum slabs
- Goos-Hänchen shifts in spin-orbit-coupled cold atoms
- Spin- and valley-dependent Goos-Hanchen effect in silicene and gapped graphene structures
- Gate-controlled valley transport and Goos-Hänchen effect in monolayer WS
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