Electronic beam shifts in monolayer graphene superlattice

Abstract

Electronic analogue of generalized Goos-Hänchen shifts is investigated in the monolayer graphene superlattice with one-dimensional periodic potentials of square barriers. It is found that the lateral shifts for the electron beam transmitted through the monolayer graphene superlattice can be negative as well as positive near the band edges of zero-$\bar{k}$ gap, which are different from those near the band edges of Bragg gap. These negative and positive beam shifts have close relation to the Dirac point. When the condition $q_A{d}_A=-q_B{d}_B=m\pi$ ($m=1,2,\mathrm{3...}$) is satisfied, the beam shifts can be controlled from negative to positive when the incident energy is above the Dirac point, and vice versa. In addition, the beam shifts can be greatly enhanced by the defect mode inside the zero-$\bar{k}$ gap. These intriguing phenomena can be verified in a relatively simple optical setup, and have potential applications in the graphene-based electron wave devices.

5 pages, 4 figures, submitted on Oct. 15, 2011

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• Strain effect on Goos-Hänchen shifts and group delay time in gapped graphene barrier
• Goos-Hänchen Shifts in Graphene with Spatially Modulated Potential
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• Controllable Goos-Hänchen Shift in Graphene Triangular Double Barrier
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