Controllable Goos-Hänchen Shift in Graphene Triangular Double Barrier
arXiv:1604.08906 · doi:10.1016/j.physe.2016.11.003
Abstract
We study the Goos-Hänchen shifts for Dirac fermions in graphene scattered by a triangular double barrier potential. The massless Dirac-like equation was used to describe the scattered fermions by such potential configuration. Our results show that the GHL shifts is affected by the geometrical structure of the double barrier. In particular the GHL shifts change sign at the transmission zero energies and exhibit enhanced peaks at each bound state associated with the double barrier when the incident angle is less than the critical angle associated with the total reflection.
14 pages, 7 figures. arXiv admin note: text overlap with arXiv:1306.5679
References in corpus (7)
- Electric Field Effect in Atomically Thin Carbon Films
- Quantum-limited shot noise in graphene
- New Generation of Massless Dirac Fermions in Graphene under External Periodic Potentials
- Quantum Goos-Hanchen effect in graphene
- Giant Goos-Hänchen Shift in Graphene Double-barrier Structures
- Goos-Hänchen-like shifts for Dirac fermions in monolayer graphene barrier
- Goos-Hänchen-Like Shifts in Atom Optics