Optical beam shifts in graphene and single-layer boron-nitride
arXiv:1610.08812 · doi:10.1364/OL.41.005780
Abstract
Optical beam shifts from a free-standing two-dimensional atomic crystal are investigated. In contrast to a three-dimensional crystal the magnitude of the Goos-Hnchen shift depends on the surface susceptibility of the crystal and not on the wavelength of the incident light beam. The surface conductivity of the atomically thin crystal is less important in this context because it enters in the expression of the shifts only as a second order parameter. In analogy to a three-dimensional crystal the magnitudes of the Imbert-Fedorov shift and of the angular shifts depend respectively on the wavelength and on the square of the beam angular aperture.
arXiv commentKeywords: Goos Hanchen, Imbert Fedorov, graphene, monolayer, Boron Nitride, spin Hall effect of light, metasurfaces
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Cited by in corpus (7)
- Precision Measurement of the Optical Conductivity of Atomically Thin Crystals via Photonic Spin Hall Effect
- Quantized photonic spin Hall effect in graphene
- Observation of the Goos-Hänchen shift in graphene via weak measurements
- Giant quantized Goos-Hänchen effect on the surface of graphene in quantum Hall regime
- Strong spin-orbit interaction of light on the surface of atomically thin crystals
- Goos-Hänchen effect in light transmission through biperiodic photonic-magnonic crystals
- Band-offset-induced lateral shift of valley electrons in ferromagnetic MoS/WS planar heterojunctions