Spin Transport in Armchair Silicene Nanoribbon on the Substrate: The Role of Charged Impurity

Abstract

In this work, electrical and spin properties of armchair silicene nanoribbon (ASiNR) in the presence of charged impurity is studied. The non-equilibrium Green's function along with multi-orbital tight-binding is applied to obtain transmission probability. different type of spin transmission probability in the ASiNR on a substrate is investigated. The charged impurities are located in the underlying substrate. Spin-flip along the channel is calculated by using spin transmission probability. Spin diffusion length in ASiNR for differently charged impurities is obtained and compared with the mean free path

Phys. Status Solidi B. (2019)

References in corpus (7)

• Ultrahigh electron mobility in suspended graphene
• The structure of suspended graphene sheets
• Atomic Structure of Graphene on SiO2
• Valley-Polarized Metals and Quantum Anomalous Hall Effect in Silicene
• Graphene as an electronic membrane
• Conductivity and Fano factor in disordered graphene
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Cited by in corpus (3)

• A Comparative Study of Substrates Disorder on Mobility in the Graphene Nanoribbon: Charged Impurity, Surface Optical Phonon, Surface Roughness
• Giant Spin Lifetime Anisotropy and Spin-Valley Locking in Silicene and Germanene from First-Principles Density-Matrix Dynamics
• The Effects of vertical electric field and charged impurities on the spin-polarized transport of $\beta$-antimonene armchair nanoribbons