activity
20162022
most citedField-Effect Transistor Based on MoSiN and WSiN Monolayers Under Biaxial Strain: A Computational Study of the Electronic Properties

33 citations · 134 across the 13 of their papers we have counts for

collaborators

14 papers

cond-mat.mtrl-sci2022

Hydrogen Storage Performance Enhancement and Bandgap Opening of M-Decorated (, Na and K) III\textsubscript{4}-V\textsubscript{4} Monolayer by Fluorine Functionalization

Alireza Kokabi, Shoeib Babaee Touski

The effects of fluorine functionalization on the hydrogen storage capability of alkaline decorated III\textsubscript{4}-V\textsubscript{4} monolayers is studied. This structure can…

cond-mat.mtrl-sci2021★ 33 cited

Field-Effect Transistor Based on MoSiN and WSiN Monolayers Under Biaxial Strain: A Computational Study of the Electronic Properties

Nayereh Ghobadi, Manouchehr Hosseini, Shoeib Babaee Touski

The electronic properties of a field-effect transistor with two different structures of MoSiN and WSiN monolayers as the channel material in the presence of biaxial…

cond-mat.mes-hall2020★ 9 cited

The Effects of vertical electric field and charged impurities on the spin-polarized transport of -antimonene armchair nanoribbons

Shoeib Babaee Touski, M. Pilar López-Sancho

The electronic properties of antimonene, single-layer Sb, are attracting great attention. In this paper, spin transport in armchair antimonene nanoribbon (ASbNR) is investigated. F…

cond-mat.mtrl-sci2020★ 17 cited

The Electrical and Spin Properties of Monolayer and Bilayer Janus HfSSe under Vertical Electrical Field

Nayereh Ghobadi, Shoeib Babaee Touski

In this paper, the electrical and spin properties of mono- and bilayer HfSSe in the presence of a vertical electric field are studied. The density functional theory is used to inve…

cond-mat.mes-hall2020

Ultra-Thin SiGe in the Source Modifies Performance of Thin-Film Tunneling FET

Hamed Habibi, Shoeib Babaee Touski

In this work, the source structure of an n-type thin-film tunneling FET is engineered to get better performance. An ultra-thin SiGe along with Si is used in the source of silicon-b…

cond-mat.mes-hall2020

Spin-Orbit and Strain Induced Modification in Electrical Properties of Monolayer InSb

Shoeib Babaee Touski

In this work, the electrical properties of monolayer InSb in the presence of biaxial strain using density functional theory are investigated. Here, we first explore the band struct…

cond-mat.mtrl-sci2020

Interplay Between Stacking Order and In-plane Strain on the Electrical Properties of Bilayer Antimonene

Shoeib Babaee Touski, Nayereh Ghobadi

In this work, the electrical properties of bilayer Antimonene with different stacking orders are studied. Density functional theory with van der Waals (vdW) correction is used to i…

cond-mat.mtrl-sci2020★ 18 cited

Strain Engineering of Spin and Rashba properties in Group-III Monochalcogenide MX (M=Ga, In and X=S, Se, Te) Monolayer

Mohammad Ariapour, Shoeib Babaee Touski

In this paper, spin properties of monolayer MX (M=Ga, In and X=S, Se, Te) in the presence of strain are studied. Density functional theory is used to investigate spin properties. T…

cond-mat.mes-hall2019★ 9 cited

Spin Relaxation at Graphene Nanoribbons in the presence of Substrate Surface Roughness

Zahra Chaghazardi, Shoeib Babaee Touski, Rahim Faez +1

In this work spin transport in corrugated armchair graphene nanoribbons (AGNR) is studied. We survey combined effects of spin-orbit interaction and surface roughness, employing the…

cond-mat.mes-hall2019★ 22 cited

A Comparative Study of Substrates Disorder on Mobility in the Graphene Nanoribbon: Charged Impurity, Surface Optical Phonon, Surface Roughness

Shoeib Babaee Touski, Manouchehr hosseini

The effects of substrate on the electronic properties of Graphene remains unclear. Many theoretical and experimental efforts have been done to clarify this discrepancy. In this wor…

cond-mat.mes-hall2019

Electrical and ELectronic Properties of Strained Mono-layer InTe

Shoeib Babaee Touski, Mohammad Ariapour, Manouchehr Hosseini

In this paper, electrical and electronic properties of strained mono-layer InTe for two structures, , and phases, is investigated. The band structure is obtained using densi…

cond-mat.mes-hall2019★ 6 cited

Spin Transport in Armchair Silicene Nanoribbon on the Substrate: The Role of Charged Impurity

Shoeib Babaee Touski

In this work, electrical and spin properties of armchair silicene nanoribbon (ASiNR) in the presence of charged impurity is studied. The non-equilibrium Green's function along with…

cond-mat.mtrl-sci2018

Spin-Splitting and Rashba-Effect at Mono-Layer GaTe in the Presence of Strain

Mohammad Ariapour, Shoeib Babaee Touski

In this paper, spintronic properties of the mono-layer GaTe under biaxial and uniaxial strain is investigated. Here, spin properties of two structures of GaTe, one with mirror symm…

cond-mat.mes-hall2016★ 20 cited

Enhanced Spin-Flip Scattering by Surface Roughness in WS and MoS Armchair Nanoribbons

Shoeib Babaee Touski, Rafael Roldán, Mahdi Pourfath +1

The band structures of single-layer MoS and WS present a coupling between spin and valley degrees of freedom that suppresses spin-flip scattering and spin dephasing. Here w…