S. B. Touski

activity

20162022

most citedField-Effect Transistor Based on MoSi

_{2}

_{4}

and WSi

_{2}

_{4}

Monolayers Under Biaxial Strain: A Computational Study of the Electronic Properties

33 citations · 134 across the 13 of their papers we have counts for

collaborators

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cond-mat.mtrl-sci2021★ 33 cited

Field-Effect Transistor Based on MoSi $_{2}$ N $_{4}$ and WSi $_{2}$ N $_{4}$ Monolayers Under Biaxial Strain: A Computational Study of the Electronic Properties

Nayereh Ghobadi, Manouchehr Hosseini, Shoeib Babaee Touski

The electronic properties of a field-effect transistor with two different structures of MoSi $_{2}$ N $_{4}$ and WSi $_{2}$ N $_{4}$ monolayers as the channel material in the presence of biaxial…

Field-Effect Transistor Based on MoSi2​N4​ and WSi2​N4​ Monolayers Under Biaxial Strain: A Computational Study of the Electronic Properties

Field-Effect Transistor Based on MoSi $_{2}$ N $_{4}$ and WSi $_{2}$ N $_{4}$ Monolayers Under Biaxial Strain: A Computational Study of the Electronic Properties