Field-Effect Transistor Based on MoSi$_2$N$_4$ and WSi$_2$N$_4$ Monolayers Under Biaxial Strain: A Computational Study of the Electronic Properties

Nayereh Ghobadi; Manouchehr Hosseini; Shoeib Babaee Touski

doi:10.1109/TED.2021.3138377

paper

Field-Effect Transistor Based on MoSi $_{2}$ N $_{4}$ and WSi $_{2}$ N $_{4}$ Monolayers Under Biaxial Strain: A Computational Study of the Electronic Properties

arXiv:2112.04171 · doi:10.1109/TED.2021.3138377

Abstract

The electronic properties of a field-effect transistor with two different structures of MoSi $_{2}$ N $_{4}$ and WSi $_{2}$ N $_{4}$ monolayers as the channel material in the presence of biaxial strain are investigated. The band structures show that these compounds are semiconductors with an indirect bandgap. Their band gaps can be adjusted by applying in-plane biaxial strain. In the following, the variation of the energies of the valleys and corresponding effective masses with respect to the strain are explored. Finally, the strained MoSi $_{2}$ N $_{4}$ or WSi $_{2}$ N $_{4}$ are used as the channel of a p-type FET and the corresponding current-voltage characteristic is explored. The results show this FET has an I $_{ON}$ /I $_{OFF}$ ratio larger than $1 0^{6}$ and subthreshold swing in the range of 96-98 mV/dec. The I $_{ON}$ /I $_{OFF}$ ratio of these compounds with respect to strain are compared.

References in corpus (9)

Cited by in corpus (1)

MoSi $_{2}$ N $_{4}$ -like crystals -- the new family of two-dimensional materials

Field-Effect Transistor Based on MoSi2​N4​ and WSi2​N4​ Monolayers Under Biaxial Strain: A Computational Study of the Electronic Properties

Abstract

References in corpus (9)

Cited by in corpus (1)

Field-Effect Transistor Based on MoSi $_{2}$ N $_{4}$ and WSi $_{2}$ N $_{4}$ Monolayers Under Biaxial Strain: A Computational Study of the Electronic Properties