Valley pseudospin in monolayer MoSi2N4 and MoSi2As4

Abstract

For a long time, two-dimensional (2D) hexagonal MoS2 was proposed as a promising material for valleytronic system. However, the limited size of growth and low carrier motilities in MoS2 restrict its further application. Very recently, a new kind of hexagonal 2D MXene, MoSi2N4, was successfully synthesized with large size, excellent ambient stability, and considerable hole mobility. In this paper, based on the first-principles calculations, we predict that the valley-contrast properties can be realized in monolayer MoSi2N4 and its derivative MoSi2As4. Beyond the traditional two-level valleys, the valleys in monolayer MoSi2As4 are multiple-folded, implying a new valley dimension. Such multiple-folded valleys can be described by a three-band low-power Hamiltonian. This study presents the theoretical advance and the potential applications of monolayer MoSi2N4 and MoSi2As4 in valleytronic devices, especially multiple information processing.

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Cited by in corpus (22)

• High intrinsic lattice thermal conductivity in monolayer MoSi${}_2$N${}_4$
• Sign-reversible valley-dependent Berry phase effects in 2D valley-half-semiconductors
• Correlation-driven topological and valley states in monolayer VSi${}_2$P${}_4$
• MoSi${}_2$N${}_4$-like crystals -- the new family of two-dimensional materials
• Strain effects on monolayer MoSi2N4: ideal strength and failure mechanism
• Tunable spin polarization and electronic structure of bottom-up synthesized MoSi${}_2$N${}_4$ materials
• Prediction of protected band edge states and dielectric tunable quasiparticle and excitonic properties of monolayer MoSi${}_2$N${}_4$
• Protected valley states and generation of valley- and spin-polarized current in monolayer MA2Z4
• Coupled spin-valley, Rashba effect and hidden persistent spin polarization in WSi${}_2$N${}_4$ family
• Novel Two-Dimensional Layered MSi${}_2$N${}_4$ (M = Mo, W): New Promising Thermal Management Materials
• Electronic properties and quasi-particle model of monolayer MoSi${}_2$N${}_4$
• Field-Effect Transistor Based on MoSi${}_2$N${}_4$ and WSi${}_2$N${}_4$ Monolayers Under Biaxial Strain: A Computational Study of the Electronic Properties
• Weyl nodal line induced pairing in Ising superconductor and high critical field
• Manipulation of valley and spin properties in two-dimensional Janus WSiGeZ${}_4$ (Z=N,P, As) through symmetry control
• Vertical Strain-Induced Modification of the Electrical and Spin Properties of Monolayer MoSi2X4 (X= N, P, As and Sb)
• Switchable large-gap quantum spin Hall state in two-dimensional MSi${}_2$Z${}_4$ materials class
• Probing the uniaxial strain-dependent valley drift and Berry curvature in monolayer MoSi${}_2$N${}_4$
• Fast electrically switchable large gap quantum spin Hall states in MGe${}_2$Z${}_4$
• Altermagnetic Flatband-Driven Fermi Surface Geometry for Giant Tunneling Magnetoresistance
• Emergence of Rashba spin valley state in two-dimensional strained bismuth oxychalcogenides Bi${}_2$O${}_2$Se
• The stable behavior of low thermal conductivity in 1T-sandwich structure with different components
• Interlayer couplings in homobilayer structures of MSi2X4 (M = Mo/W, X = N/P/As)