Sign-reversible valley-dependent Berry phase effects in 2D valley-half-semiconductors

Abstract

Manipulating valley-dependent Berry phase effects provides remarkable opportunities for both fundamental research and practical applications. Here, by referring to effective model analysis, we propose a general scheme for realizing topological magneto-valley phase transitions. More importantly, by using valley-half-semiconducting VSi2N4 as an outstanding example, we investigate sign change of valley-dependent Berry phase effects which drive the change-in-sign valley anomalous transport characteristics via external means such as biaxial strain, electric field, and correlation effects. As a result, this gives rise to quantized versions of valley anomalous transport phenomena. Our findings not only uncover a general framework to control valley degree of freedom, but also motivate further research in the direction of multifunctional quantum devices in valleytronics and spintronics.

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• MoSi${}_2$N${}_4$-like crystals -- the new family of two-dimensional materials
• Sensitive electronic correlation effects on electronic properties in ferrovalley material Janus FeClF monolayer
• Floquet Engineering of Nonequilibrium Valley-Polarized Quantum Anomalous Hall Effect with Tunable Chern Number
• Tunable valley and spin splittings in $\mathrm{VS}{\mathrm{i}}_2{\mathrm{N}}_4$ bilayer
• Valley polarization transition driven by biaxial strain in Janus $\mathrm{GdClF}$ monolayer
• A possible electronic state quasi-half-valley-metal in $\mathrm{VG}{\mathrm{e}}_2{\mathrm{P}}_4$ monolayer
• Spin and orbital transport in rare earth dichalcogenides: The case of EuS${}_2$
• Reversal of Orbital Hall Conductivity and Emergence of Tunable Topological Quantum States in Orbital Hall Insulator
• Two-dimensional Janus Si dichalcogenides: A first-principles study
• Layer Control of Magneto-Optical Effects and Their Quantization in Spin-Valley Splitting Antiferromagnets
• High-Order Topological Phase Diagram Revealed by Anomalous Nernst Effect in Janus ScClI Monolayer
• Importance of magnetic shape anisotropy in determining magnetic and electronic properties of monolayer $\mathrm{VS}{\mathrm{i}}_2{\mathrm{P}}_4$
• Electric field controlled valley-polarized photocurrent switch based on the circular bulk photovoltaic effect
• Ferroelectric Antiferromagnetic Lifting of Spin-Valley Degeneracy
• Piezoelectric quantum spin Hall insulator VCClBr monolayer with pure out-of-plane piezoelectric response