Sign-reversible valley-dependent Berry phase effects in 2D valley-half-semiconductors

Abstract

Manipulating valley-dependent Berry phase effects provides remarkable opportunities for both fundamental research and practical applications. Here, by referring to effective model analysis, we propose a general scheme for realizing topological magneto-valley phase transitions. More importantly, by using valley-half-semiconducting VSi2N4 as an outstanding example, we investigate sign change of valley-dependent Berry phase effects which drive the change-in-sign valley anomalous transport characteristics via external means such as biaxial strain, electric field, and correlation effects. As a result, this gives rise to quantized versions of valley anomalous transport phenomena. Our findings not only uncover a general framework to control valley degree of freedom, but also motivate further research in the direction of multifunctional quantum devices in valleytronics and spintronics.

References in corpus (9)

• Topological Field Theory of Time-Reversal Invariant Insulators
• The Valley Hall Effect in MoS2 Transistors
• First Principles Calculation of Anomalous Hall Conductivity in Ferromagnetic bcc Fe
• Berry phase effect in anomalous thermoelectric transport
• Coupling the valley degree of freedom to antiferromagnetic order
• Valley-related multiple Hall effect in single-layer VSi2P4
• Resonant photovoltaic effect in doped magnetic semiconductors
• Fully spin-polarized nodal loop semimetals in alkaline-metal monochalcogenide monolayers
• Universal Faraday rotation in HgTe wells with critical thickness

Cited by in corpus (3)

• Layer Control of Magneto-Optical Effects and Their Quantization in Spin-Valley Splitting Antiferromagnets
• Importance of magnetic shape anisotropy in determining magnetic and electronic properties of monolayer $\mathrm{VS}{\mathrm{i}}_2{\mathrm{P}}_4$
• Electric field controlled valley-polarized photocurrent switch based on the circular bulk photovoltaic effect