Universal Faraday rotation in HgTe wells with critical thickness

Abstract

The universal value of Faraday rotation angle close to the fine structure constant is experimentally observed in thin HgTe quantum wells with thickness on the border between trivial insulating and the topologically non-trivial Dirac phases. The quantized value of the Faraday angle remains robust in the broad range of magnetic fields and gate voltages. Dynamic Hall conductivity of the hole-like carriers extracted from the analysis of the transmission data shows theoretically predicted universal value of consistent with the doubly degenerate Dirac state. On shifting the Fermi level by the gate voltage the effective sign of the charge carriers changes from positive (holes) to negative (electrons). The electron-like part of the dynamic response does not show quantum plateaus and is well described within the classical Drude model.

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• Optical properties of massive anisotropic tilted Dirac systems
• Fully spin-polarized nodal loop semimetals in alkaline-metal monochalcogenide monolayers
• Faraday rotation due to surface states in the topological insulator (Bi${}_{1-x}$Sb${}_x$)${}_2$Te${}_3$
• Landau level spectroscopy of valence bands in HgTe quantum wells: Effects of symmetry lowering
• Band Structure of Two-dimensional Dirac Semimetal from Cyclotron Resonance
• Layer Control of Magneto-Optical Effects and Their Quantization in Spin-Valley Splitting Antiferromagnets
• High-frequency breakdown of the integer QHE in GaAs/AlGaAs heterojunctions
• Superradiant and transport lifetimes of the cyclotron resonance in the topological insulator HgTe
• Terahertz Magnetospectroscopy of Cyclotron Resonances from Topological Surface States in Thick Films of Cd${}_x$Hg${}_{1-x}$Te
• Quantitative Measurements of Giant and Quantized Microwave Faraday Rotation
• Faraday rotation and transmittance as markers of topological phase transitions in 2D materials
• Universal transparency and fine band structure near the Dirac point in HgTe quantum wells
• Impact ionization induced by terahertz radiation in HgTe quantum wells of critical thickness